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IPD60R950C6-VB Product details
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Product Introduction - IPD60R950C6-VB
IPD60R950C6-VB is a high voltage single N-channel power MOSFET in TO252 package. Designed for high voltage environments, this MOSFET has a drain-source voltage withstand capability of 650V and a drain current capability of 5A. It is manufactured using SJ_Multi-EPI (polysilicon technology) and has a high on-resistance (RDS(ON) of 1000mΩ @ VGS=10V), providing stable switching performance for applications requiring high voltage and reliability. Suitable for a variety of high voltage power supplies and switch control systems.
IPD60R950C6-VB is a high voltage single N-channel power MOSFET in TO252 package. Designed for high voltage environments, this MOSFET has a drain-source voltage withstand capability of 650V and a drain current capability of 5A. It is manufactured using SJ_Multi-EPI (polysilicon technology) and has a high on-resistance (RDS(ON) of 1000mΩ @ VGS=10V), providing stable switching performance for applications requiring high voltage and reliability. Suitable for a variety of high voltage power supplies and switch control systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1000mΩ @ VGS=10V
- **Drain current (ID)**: 5A
- **Technology type**: SJ_Multi-EPI (polysilicon technology)
- **Thermal resistance**: Suitable for high power density applications with good heat dissipation performance
- **Package type**: TO252
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1000mΩ @ VGS=10V
- **Drain current (ID)**: 5A
- **Technology type**: SJ_Multi-EPI (polysilicon technology)
- **Thermal resistance**: Suitable for high power density applications with good heat dissipation performance
Domain and module applications：
Applications and module examples
1. **High-voltage power converter**
The high withstand voltage characteristics of the IPD60R950C6-VB make it very suitable for use in high-voltage power converters, such as industrial power supplies and high-voltage power modules. Despite its high on-resistance, its high withstand voltage capability ensures reliability under high voltage conditions.
2. **Photovoltaic inverter**
In photovoltaic inverter applications, this MOSFET can effectively handle high-voltage DC inputs and help photovoltaic systems convert power. It is suitable for photovoltaic systems that require high withstand voltage and high reliability.
3. **Electric vehicle charging system**
The high voltage capability and stable performance of the IPD60R950C6-VB make it suitable for use in the charging system of electric vehicles. It can withstand the high voltage generated during the charging process and ensure the safety and efficiency of the charging process.
4. **Industrial Motor Drive**
In industrial motor drive applications, IPD60R950C6-VB provides a stable high voltage switching function, suitable for high voltage motor control systems, ensuring the reliability and efficiency of motor drive.
5. **High Voltage Switch and Protection Circuit**
This MOSFET can also be used in high voltage switching and protection circuits to provide protection for power electronic equipment. It can withstand higher voltages and effectively protect circuits from overvoltage and short circuits.
1. **High-voltage power converter**
The high withstand voltage characteristics of the IPD60R950C6-VB make it very suitable for use in high-voltage power converters, such as industrial power supplies and high-voltage power modules. Despite its high on-resistance, its high withstand voltage capability ensures reliability under high voltage conditions.
2. **Photovoltaic inverter**
In photovoltaic inverter applications, this MOSFET can effectively handle high-voltage DC inputs and help photovoltaic systems convert power. It is suitable for photovoltaic systems that require high withstand voltage and high reliability.
3. **Electric vehicle charging system**
The high voltage capability and stable performance of the IPD60R950C6-VB make it suitable for use in the charging system of electric vehicles. It can withstand the high voltage generated during the charging process and ensure the safety and efficiency of the charging process.
4. **Industrial Motor Drive**
In industrial motor drive applications, IPD60R950C6-VB provides a stable high voltage switching function, suitable for high voltage motor control systems, ensuring the reliability and efficiency of motor drive.
5. **High Voltage Switch and Protection Circuit**
This MOSFET can also be used in high voltage switching and protection circuits to provide protection for power electronic equipment. It can withstand higher voltages and effectively protect circuits from overvoltage and short circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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