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IPD60R750E6-VB Product details
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Product Introduction:
IPD60R750E6-VB is a high-voltage single N-channel MOSFET in TO252 package, specially designed for high-voltage environments. Its maximum drain-source voltage (VDS) is 650V, and it can withstand gate-source voltages (VGS) of up to ±30V, making it excel in high-voltage applications. The MOSFET has a turn-on threshold voltage (Vth) of 3.5V, ensuring that it can be turned on at a relatively low gate voltage. IPD60R750E6-VB uses SJ_Multi-EPI technology, which improves the voltage resistance of the MOSFET. Although its on-resistance is 700mΩ (@VGS=10V), it can still effectively support currents of up to 7A in high-voltage application scenarios.
IPD60R750E6-VB is a high-voltage single N-channel MOSFET in TO252 package, specially designed for high-voltage environments. Its maximum drain-source voltage (VDS) is 650V, and it can withstand gate-source voltages (VGS) of up to ±30V, making it excel in high-voltage applications. The MOSFET has a turn-on threshold voltage (Vth) of 3.5V, ensuring that it can be turned on at a relatively low gate voltage. IPD60R750E6-VB uses SJ_Multi-EPI technology, which improves the voltage resistance of the MOSFET. Although its on-resistance is 700mΩ (@VGS=10V), it can still effectively support currents of up to 7A in high-voltage application scenarios.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | 700mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Parameter description:
- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Turn-on threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 700mΩ @ VGS=10V
- **Drain current (ID)**: 7A
- **Technology type**: SJ_Multi-EPI (multi-layer EPI technology)
- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Turn-on threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 700mΩ @ VGS=10V
- **Drain current (ID)**: 7A
- **Technology type**: SJ_Multi-EPI (multi-layer EPI technology)
Domain and module applications：
Application fields and modules:
1. **High-voltage power conversion**: Since the IPD60R750E6-VB has a high drain-source voltage of 650V, it is suitable for high-voltage power converters such as AC-DC converters and high-voltage DC-DC converters. It can work stably under high voltage conditions to ensure power conversion efficiency and system stability.
2. **Inverter**: In solar inverters and wind power inverters, this MOSFET can handle high-voltage DC to AC conversion, ensuring reliable operation of the inverter in a high-voltage environment. Despite the high on-resistance, it performs well in high-voltage occasions.
3. **High-voltage switch**: The IPD60R750E6-VB performs well in high-voltage switch modules, such as power switches and protection circuits. It can effectively manage high-voltage switching operations to ensure the stability and safety of equipment under high voltage.
4. **Power management system**: In power management and control systems, such as overvoltage protection and load switching in high-voltage power systems, this MOSFET can provide high voltage protection. Although its on-resistance is high, its withstand voltage performance makes it suitable for applications that require high voltage control.
5. **Industrial control system**: In industrial motor drive and load switching systems that require high voltage control, the IPD60R750E6-VB can provide stable high voltage switching performance, support complex industrial control tasks, and ensure reliable operation of equipment in high voltage environments.
1. **High-voltage power conversion**: Since the IPD60R750E6-VB has a high drain-source voltage of 650V, it is suitable for high-voltage power converters such as AC-DC converters and high-voltage DC-DC converters. It can work stably under high voltage conditions to ensure power conversion efficiency and system stability.
2. **Inverter**: In solar inverters and wind power inverters, this MOSFET can handle high-voltage DC to AC conversion, ensuring reliable operation of the inverter in a high-voltage environment. Despite the high on-resistance, it performs well in high-voltage occasions.
3. **High-voltage switch**: The IPD60R750E6-VB performs well in high-voltage switch modules, such as power switches and protection circuits. It can effectively manage high-voltage switching operations to ensure the stability and safety of equipment under high voltage.
4. **Power management system**: In power management and control systems, such as overvoltage protection and load switching in high-voltage power systems, this MOSFET can provide high voltage protection. Although its on-resistance is high, its withstand voltage performance makes it suitable for applications that require high voltage control.
5. **Industrial control system**: In industrial motor drive and load switching systems that require high voltage control, the IPD60R750E6-VB can provide stable high voltage switching performance, support complex industrial control tasks, and ensure reliable operation of equipment in high voltage environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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