IPD60R600P6-VB Product details
Product introduction:
IPD60R600P6-VB is a high-voltage N-channel power MOSFET in TO252 package. This MOSFET is designed to handle high-voltage applications and has a drain-source voltage (VDS) of 650V and a drain current (ID) handling capability of 9A. It uses SJ_Multi-EPI technology, which provides good high-voltage performance and reliability. The on-resistance (RDS(ON)) of this MOSFET is 500mΩ (VGS=10V), which is suitable for high-voltage and medium-current switching applications. The gate threshold voltage (Vth) is 3.5V, ensuring efficient switching control even at standard gate drive voltage.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | 500mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **Package type**: TO252
- **Configuration**: Single channel N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 500mΩ @ VGS=10V
- **Drain current (ID)**: 9A
- **Technology**: SJ_Multi-EPI technology
- **Thermal resistance (Rth)**: Depends on the specific heat dissipation conditions, usually designed for effective heat dissipation requirements in high-voltage applications
Domain and module applications:
1. **High-voltage power switch**
The high drain-source voltage capability of the IPD60R600P6-VB makes it suitable for high-voltage power switch applications. This includes high-voltage switch-mode power supplies (SMPS) and industrial power converters. Its stable switching performance and high voltage tolerance can effectively improve the efficiency and reliability of the power system.
2. **Motor drive and protection**
In motor drive systems, especially motor control that requires high voltage, the IPD60R600P6-VB can be used as a power switch or protection switch for the motor. It can withstand high voltage while providing stable current control to ensure the reliability and safety of the motor drive system.
3. **Energy management system**
This MOSFET is suitable for energy management systems, such as in solar inverters and battery management systems. Its high voltage capability and stability make it an ideal choice for high voltage conversion and management applications.
4. **High Voltage Electronic Equipment**
IPD60R600P6-VB has a wide range of applications in high voltage electronic equipment, including high voltage relays and protection switches. Due to its high voltage withstand capability and low on-resistance, it can provide reliable switching and protection functions in high voltage operating environments.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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