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IPD60R600E6-VB Product details
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1. IPD60R600E6-VB Product Introduction:
IPD60R600E6-VB is a single N-channel power MOSFET in TO252 package, designed for high voltage applications. The MOSFET has a drain-source voltage (VDS) of up to 650V and a gate-source voltage (VGS) tolerance range of ±30V. Its turn-on threshold voltage (Vth) is 3.5V, and it uses SJ_Multi-EPI technology to optimize performance, which is particularly suitable for applications in high voltage environments. The on-resistance (RDS(ON)) of IPD60R600E6-VB is 500mΩ (@VGS=10V), and the maximum drain current is 9A. It is suitable for applications that handle high voltage and relatively medium current, providing stable switching performance and low conduction losses.
IPD60R600E6-VB is a single N-channel power MOSFET in TO252 package, designed for high voltage applications. The MOSFET has a drain-source voltage (VDS) of up to 650V and a gate-source voltage (VGS) tolerance range of ±30V. Its turn-on threshold voltage (Vth) is 3.5V, and it uses SJ_Multi-EPI technology to optimize performance, which is particularly suitable for applications in high voltage environments. The on-resistance (RDS(ON)) of IPD60R600E6-VB is 500mΩ (@VGS=10V), and the maximum drain current is 9A. It is suitable for applications that handle high voltage and relatively medium current, providing stable switching performance and low conduction losses.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | 500mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. IPD60R600E6-VB Detailed parameter description:
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Turn-on threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 500mΩ @ VGS=10V
- **Maximum drain current (ID)**: 9A
- **Technology type**: SJ_Multi-EPI
- **Maximum power consumption**: Depends on specific application and heat dissipation design
- **Operating temperature range**: -55°C to 175°C
- **Typical applications**: high voltage switch, inverter, power management, protection circuit, etc.
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Turn-on threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 500mΩ @ VGS=10V
- **Maximum drain current (ID)**: 9A
- **Technology type**: SJ_Multi-EPI
- **Maximum power consumption**: Depends on specific application and heat dissipation design
- **Operating temperature range**: -55°C to 175°C
- **Typical applications**: high voltage switch, inverter, power management, protection circuit, etc.
Domain and module applications：
3. Application fields and module examples:
1. **High voltage switch**:
The high drain-source voltage (650V) of IPD60R600E6-VB makes it very suitable for use as a high voltage switch. In industrial power supplies and high-voltage power management systems, this MOSFET can efficiently handle high voltage loads while maintaining stable switching performance to ensure the safety and reliability of the equipment.
2. **Inverter**:
In inverter applications, especially high-voltage DC-AC inverters, IPD60R600E6-VB can withstand voltages up to 650V and handle currents up to 9A. This makes it suitable for scenarios that require high voltage and high efficiency, such as photovoltaic inverters and wind power generation systems, helping to improve the overall performance of the inverter.
3. **Power management**:
For power management systems that require high voltage output, such as high-voltage power modules and motor drive controllers, IPD60R600E6-VB provides good current handling capability and voltage tolerance. Its low on-resistance makes it an excellent performer in power management and power conversion applications, especially in high-voltage power modules.
4. **Protection Circuit**:
In the high-voltage protection circuit, the IPD60R600E6-VB can be used as an overvoltage protection device to protect the power system from overvoltage or overcurrent. Its high voltage tolerance and stable switching performance ensure the safety and reliability of the system and improve the life and stability of the overall equipment.
The high voltage tolerance and moderate on-resistance of the IPD60R600E6-VB make it a strong choice in high-voltage applications, providing stable performance and reliable protection.
1. **High voltage switch**:
The high drain-source voltage (650V) of IPD60R600E6-VB makes it very suitable for use as a high voltage switch. In industrial power supplies and high-voltage power management systems, this MOSFET can efficiently handle high voltage loads while maintaining stable switching performance to ensure the safety and reliability of the equipment.
2. **Inverter**:
In inverter applications, especially high-voltage DC-AC inverters, IPD60R600E6-VB can withstand voltages up to 650V and handle currents up to 9A. This makes it suitable for scenarios that require high voltage and high efficiency, such as photovoltaic inverters and wind power generation systems, helping to improve the overall performance of the inverter.
3. **Power management**:
For power management systems that require high voltage output, such as high-voltage power modules and motor drive controllers, IPD60R600E6-VB provides good current handling capability and voltage tolerance. Its low on-resistance makes it an excellent performer in power management and power conversion applications, especially in high-voltage power modules.
4. **Protection Circuit**:
In the high-voltage protection circuit, the IPD60R600E6-VB can be used as an overvoltage protection device to protect the power system from overvoltage or overcurrent. Its high voltage tolerance and stable switching performance ensure the safety and reliability of the system and improve the life and stability of the overall equipment.
The high voltage tolerance and moderate on-resistance of the IPD60R600E6-VB make it a strong choice in high-voltage applications, providing stable performance and reliable protection.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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