IPD60R600CP-VB Product details
Product introduction:
IPD60R600CP-VB is a high voltage, high current carrying capacity single N-channel MOSFET in TO252 package. It has a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of ±30V, and a threshold voltage (Vth) of 3.5V. The on-resistance (RDS(ON)) of this MOSFET is 500mΩ @ VGS=10V, and the maximum drain current (ID) reaches 9A. IPD60R600CP-VB uses SJ_Multi-EPI technology and is designed for high voltage and high power applications with excellent voltage tolerance and stability. This makes it very suitable for high voltage switching and power conversion applications, and can provide reliable performance in harsh environments.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | 500mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
1. **Package type**: TO252
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 650V
4. **Gate-source voltage (VGS)**: ±30V
5. **Threshold voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**:
- 500mΩ @ VGS=10V
7. **Drain current (ID)**: 9A
8. **Technology**: SJ_Multi-EPI
9. **Gate charge (Qg)**: Moderate, suitable for high voltage switching
10. **Operating temperature range**: -55°C to 175°C
11. **Power consumption (Ptot)**: Suitable for high power applications with good heat dissipation performance
Domain and module applications:
1. **Power management system**: The IPD60R600CP-VB performs well in high-voltage switching power supplies and power inverters. For example, in high-voltage DC-AC inverters, this MOSFET can withstand high voltages and effectively control the flow of current, thereby improving the efficiency and stability of the system, and is suitable for applications such as solar inverters and high-voltage inverters.
2. **Industrial power**: In industrial power supplies and power conversion modules, such as inverters and high-voltage power adapters, the IPD60R600CP-VB is able to handle high voltage and high current loads, ensuring the stability and reliability of the power system. This makes it very suitable for industrial equipment that requires high voltage protection and power conversion.
3. **Home appliances**: This MOSFET is suitable for high-voltage home appliances, such as power tools and high-voltage electric heaters. Its high drain-source voltage capability and low on-resistance enable it to effectively control power in these high-voltage loads, improving the overall performance and reliability of the equipment.
4. **Automotive electronics**: In the high-voltage power management system of electric vehicles, the IPD60R600CP-VB can be used as a power switch, providing high voltage tolerance and stable performance. This helps improve the efficiency of electric vehicle chargers and battery management systems, and enhance the overall safety and performance of the vehicle.
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