中文
English
IPD60R600C6-VB Product details
Back to previous pageProduct introduction：
Product Introduction:
IPD60R600C6-VB is a single N-channel MOSFET in TO252 package. This MOSFET adopts SJ_Multi-EPI technology and is designed for high voltage applications. It has a drain-source voltage (VDS) of 650V and a continuous drain current (ID) of 9A, suitable for operation in high voltage environments. Its gate threshold voltage (Vth) is 3.5V, and it can be turned on at a moderate gate voltage. Although its on-resistance (RDS(ON)) is 500mΩ @ VGS=10V, this design still ensures its stability and reliability in high voltage and high power applications.
IPD60R600C6-VB is a single N-channel MOSFET in TO252 package. This MOSFET adopts SJ_Multi-EPI technology and is designed for high voltage applications. It has a drain-source voltage (VDS) of 650V and a continuous drain current (ID) of 9A, suitable for operation in high voltage environments. Its gate threshold voltage (Vth) is 3.5V, and it can be turned on at a moderate gate voltage. Although its on-resistance (RDS(ON)) is 500mΩ @ VGS=10V, this design still ensures its stability and reliability in high voltage and high power applications.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | 500mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description:
- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 500mΩ @ VGS=10V
- **Continuous drain current (ID)**: 9A
- **Technology**: SJ_Multi-EPI technology
- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 500mΩ @ VGS=10V
- **Continuous drain current (ID)**: 9A
- **Technology**: SJ_Multi-EPI technology
Domain and module applications：
Application areas and module examples:
1. **High-voltage power switch**: The IPD60R600C6-VB is suitable for high-voltage power switch applications due to its high drain-source voltage of 650V. For example, in AC-DC converters and high-voltage DC converters, this MOSFET can stably handle high-voltage switching operations, thereby ensuring the safety and efficiency of the power system.
2. **Industrial power management**: In industrial power management systems, this MOSFET can handle high-voltage loads, such as in power distribution devices and industrial motor drive systems, to ensure stable operation in high-voltage environments.
3. **Inverter**: In inverter systems such as photovoltaic and wind power, the IPD60R600C6-VB can provide reliable high-voltage switching performance, support efficient energy conversion and management, and improve the efficiency and reliability of the inverter.
4. **Home appliances and lighting equipment**: This MOSFET is also suitable for switching control of high-voltage home appliances and lighting equipment. For example, in high-voltage lamps and electric heaters, it can stably control high voltage current, improving the safety and performance of the equipment.
1. **High-voltage power switch**: The IPD60R600C6-VB is suitable for high-voltage power switch applications due to its high drain-source voltage of 650V. For example, in AC-DC converters and high-voltage DC converters, this MOSFET can stably handle high-voltage switching operations, thereby ensuring the safety and efficiency of the power system.
2. **Industrial power management**: In industrial power management systems, this MOSFET can handle high-voltage loads, such as in power distribution devices and industrial motor drive systems, to ensure stable operation in high-voltage environments.
3. **Inverter**: In inverter systems such as photovoltaic and wind power, the IPD60R600C6-VB can provide reliable high-voltage switching performance, support efficient energy conversion and management, and improve the efficiency and reliability of the inverter.
4. **Home appliances and lighting equipment**: This MOSFET is also suitable for switching control of high-voltage home appliances and lighting equipment. For example, in high-voltage lamps and electric heaters, it can stably control high voltage current, improving the safety and performance of the equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
