IPD60R520CP-VB Product details
Product introduction:
The IPD60R520CP-VB is a high voltage N-channel MOSFET in a TO252 package. It has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, and can operate stably in a high voltage environment. The gate threshold voltage of this MOSFET is 3.5V, and it uses advanced SJ_Multi-EPI technology to improve high voltage characteristics and performance. The on-resistance (RDS(ON)) of the IPD60R520CP-VB is 500mΩ at VGS = 10V, and it can carry a current of up to 9A. These characteristics make the IPD60R520CP-VB suitable for applications that require high voltage, high power and high reliability.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | 500mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
1. **Package type**: TO252
2. **Polarity**: N-channel
3. **Drain-source voltage (VDS)**: 650V
4. **Gate-source voltage (VGS)**: ±30V
5. **Gate threshold voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**:
- 500mΩ @ VGS = 10V
7. **Drain current (ID)**: 9A
8. **Technology type**: SJ_Multi-EPI
9. **Operating temperature range**: -55°C to 175°C
10. **Power dissipation (Ptot)**: Typically 60W
11. **Maximum pulse current (ID, pulse)**: up to 30A
12. **Input capacitance (Ciss)**: about 3500pF
13. **Reverse recovery time (Trr)**: typical value is about 80ns
14. **Gate charge (Qg)**: typical value is 120nC
Domain and module applications:
1. **High-voltage Switching Power Supply (SMPS)**:
IPD60R520CP-VB is suitable for high-power conversion applications in high-voltage switching power supplies, such as high-voltage DC-DC converters or AC-DC converters, capable of handling voltages up to 650V. Its low on-resistance and good switching performance help improve system efficiency and stability.
2. **Industrial Power Management**:
In industrial power management systems, this MOSFET can be used in switching modules for high-voltage power supply systems. Its high voltage and high current capabilities enable it to handle high power demands in industrial environments while maintaining efficient energy conversion and thermal management.
3. **Electric Vehicles (EV)**:
In electric vehicle systems, IPD60R520CP-VB is suitable for battery management systems (BMS) and motor control modules. Its high voltage tolerance and stability are critical to the safety and performance of electric vehicles in high voltage and high power environments.
4. **Lighting Control**:
This MOSFET is also suitable for high voltage lighting control systems, such as switches and dimming modules for high voltage lamps or light sources. Its stable performance and high voltage withstand capability enable it to maintain reliable operation in demanding lighting applications.
With its high voltage withstand capability and excellent conduction performance, the IPD60R520CP-VB performs well in a variety of high power, high voltage applications, providing a reliable solution.
Technical support:
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