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IPD60R520C6-VB Product details
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IPD60R520C6-VB MOSFET Product Introduction
The IPD60R520C6-VB is a high voltage N-channel MOSFET in a TO252 package designed for high voltage switching and power management applications. The MOSFET supports drain-source voltage (VDS) up to 650V and gate-source voltage (VGS) of ±30V, and uses SJ_Multi-EPI technology. Despite its relatively high on-resistance (500mΩ), it performs well in high voltage applications, providing stable switching performance and high voltage withstand capability.
The IPD60R520C6-VB is a high voltage N-channel MOSFET in a TO252 package designed for high voltage switching and power management applications. The MOSFET supports drain-source voltage (VDS) up to 650V and gate-source voltage (VGS) of ±30V, and uses SJ_Multi-EPI technology. Despite its relatively high on-resistance (500mΩ), it performs well in high voltage applications, providing stable switching performance and high voltage withstand capability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | 500mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Polarity configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Throw-on voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 500mΩ @ VGS=10V
- **Maximum drain current (ID)**: 9A
- **Technology**: SJ_Multi-EPI
- **Package type**: TO252
- **Polarity configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Throw-on voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 500mΩ @ VGS=10V
- **Maximum drain current (ID)**: 9A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples
1. **High-voltage power management**: The IPD60R520C6-VB is suitable for high-voltage power management systems, such as industrial power converters and power electronic equipment. In these applications, the high withstand voltage characteristic of 650V ensures the stability of the equipment under high-voltage operation, and is suitable for switching and controlling high-voltage power modules.
2. **Power inverter**: In solar inverters and other power inverters, this MOSFET is able to handle high voltage input and output to ensure efficient energy conversion. Although its on-resistance is high, its high withstand voltage performance makes it suitable for high-voltage inverter applications.
3. **Power switchgear**: Used in high-voltage power switchgear, such as power circuit breakers and power switches, the IPD60R520C6-VB is able to handle high-voltage switching operations. Its design ensures reliability under high voltage and is suitable for critical switching operations in power systems.
4. **Industrial control systems**: In industrial control systems that require high voltage resistance, such as motor drive and heater control, this MOSFET can provide stable switching performance. Its high voltage withstand capability enables it to handle high-power loads and is suitable for a variety of industrial application environments.
The high voltage resistance characteristics and relatively high on-resistance of the IPD60R520C6-VB make it excellent in high-voltage applications, suitable for power management, inverters, switchgear and industrial control systems that require high voltage and high reliability.
1. **High-voltage power management**: The IPD60R520C6-VB is suitable for high-voltage power management systems, such as industrial power converters and power electronic equipment. In these applications, the high withstand voltage characteristic of 650V ensures the stability of the equipment under high-voltage operation, and is suitable for switching and controlling high-voltage power modules.
2. **Power inverter**: In solar inverters and other power inverters, this MOSFET is able to handle high voltage input and output to ensure efficient energy conversion. Although its on-resistance is high, its high withstand voltage performance makes it suitable for high-voltage inverter applications.
3. **Power switchgear**: Used in high-voltage power switchgear, such as power circuit breakers and power switches, the IPD60R520C6-VB is able to handle high-voltage switching operations. Its design ensures reliability under high voltage and is suitable for critical switching operations in power systems.
4. **Industrial control systems**: In industrial control systems that require high voltage resistance, such as motor drive and heater control, this MOSFET can provide stable switching performance. Its high voltage withstand capability enables it to handle high-power loads and is suitable for a variety of industrial application environments.
The high voltage resistance characteristics and relatively high on-resistance of the IPD60R520C6-VB make it excellent in high-voltage applications, suitable for power management, inverters, switchgear and industrial control systems that require high voltage and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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