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IPD60R450E6-VB Product details
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1. IPD60R450E6-VB Product Introduction
IPD60R450E6-VB is a high-voltage single N-channel MOSFET in TO252 package. This MOSFET is designed for high voltage environments and has a maximum drain-source voltage of 650V and a drain current capability of 11A. Its gate-source voltage range is ±30V, the gate threshold voltage is 3.5V, and the on-resistance is 370mΩ (at VGS=10V). The device uses SJ_Multi-EPI technology to provide excellent voltage resistance and thermal stability, and is very suitable for high-voltage power switches and other applications requiring high voltage carrying capacity.
IPD60R450E6-VB is a high-voltage single N-channel MOSFET in TO252 package. This MOSFET is designed for high voltage environments and has a maximum drain-source voltage of 650V and a drain current capability of 11A. Its gate-source voltage range is ±30V, the gate threshold voltage is 3.5V, and the on-resistance is 370mΩ (at VGS=10V). The device uses SJ_Multi-EPI technology to provide excellent voltage resistance and thermal stability, and is very suitable for high-voltage power switches and other applications requiring high voltage carrying capacity.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 11A | 370mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. IPD60R450E6-VB Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 370mΩ@VGS=10V
- **Drain current (ID)**: 11A
- **Technology**: SJ_Multi-EPI (polysilicon technology)
- **Other features**: High withstand voltage, good thermal stability and high power handling capability, suitable for high voltage and high power applications.
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 370mΩ@VGS=10V
- **Drain current (ID)**: 11A
- **Technology**: SJ_Multi-EPI (polysilicon technology)
- **Other features**: High withstand voltage, good thermal stability and high power handling capability, suitable for high voltage and high power applications.
Domain and module applications：
3. Application fields and module examples of IPD60R450E6-VB
1. **High-voltage power switch**: IPD60R450E6-VB is suitable for high-voltage power switch applications such as AC-DC converters and high-voltage DC-DC converters due to its high voltage withstand capability of 650V. This MOSFET can stably manage high-voltage power, reduce energy loss and improve efficiency.
2. **Inverter**: In solar inverters, UPS (uninterruptible power supply) and other high-power inverter applications, the high voltage carrying capacity and thermal stability of this MOSFET make it an ideal choice. It can effectively withstand the high voltage stress in the inverter, ensuring the reliability and long life of the system.
3. **Industrial power module**: In industrial equipment and power systems, IPD60R450E6-VB can be used as a switching element of a high-voltage power module. Its superior voltage withstand performance can meet the requirements for high-voltage stability in industrial applications and improve the reliability and safety of the overall system.
4. **Power Tools**: In high voltage power tools, such as electric drills and electric saws, the IPD60R450E6-VB can be used as a switch controller. Its high voltage resistance and stability ensure safe operation of the tool, even in high power applications, it can maintain high efficiency.
These application areas take full advantage of the high voltage handling capability and stability of the IPD60R450E6-VB, making it perform well in high power and high voltage environments.
1. **High-voltage power switch**: IPD60R450E6-VB is suitable for high-voltage power switch applications such as AC-DC converters and high-voltage DC-DC converters due to its high voltage withstand capability of 650V. This MOSFET can stably manage high-voltage power, reduce energy loss and improve efficiency.
2. **Inverter**: In solar inverters, UPS (uninterruptible power supply) and other high-power inverter applications, the high voltage carrying capacity and thermal stability of this MOSFET make it an ideal choice. It can effectively withstand the high voltage stress in the inverter, ensuring the reliability and long life of the system.
3. **Industrial power module**: In industrial equipment and power systems, IPD60R450E6-VB can be used as a switching element of a high-voltage power module. Its superior voltage withstand performance can meet the requirements for high-voltage stability in industrial applications and improve the reliability and safety of the overall system.
4. **Power Tools**: In high voltage power tools, such as electric drills and electric saws, the IPD60R450E6-VB can be used as a switch controller. Its high voltage resistance and stability ensure safe operation of the tool, even in high power applications, it can maintain high efficiency.
These application areas take full advantage of the high voltage handling capability and stability of the IPD60R450E6-VB, making it perform well in high power and high voltage environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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