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IPD60R385CP-VB Product details
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1. IPD60R385CP-VB Product Introduction
IPD60R385CP-VB is a high voltage N-channel MOSFET in TO252 package, designed for high voltage applications. Its 650V drain-source breakdown voltage and 11A drain current capability make it suitable for high voltage and high power electronic devices. Using SJ_Multi-EPI technology, this MOSFET provides excellent voltage resistance and stability, suitable for use in high voltage switching, control and power management systems.
IPD60R385CP-VB is a high voltage N-channel MOSFET in TO252 package, designed for high voltage applications. Its 650V drain-source breakdown voltage and 11A drain current capability make it suitable for high voltage and high power electronic devices. Using SJ_Multi-EPI technology, this MOSFET provides excellent voltage resistance and stability, suitable for use in high voltage switching, control and power management systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 11A | 370mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. IPD60R385CP-VB Detailed parameter description
- **Package type**: TO252
- **Channel configuration**: Unipolar N-channel
- **Drain-source breakdown voltage (VDS)**: 650V
- **Gate drive voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 370mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 11A
- **Technology**: SJ_Multi-EPI (Multilayer EPI technology)
- **Package type**: TO252
- **Channel configuration**: Unipolar N-channel
- **Drain-source breakdown voltage (VDS)**: 650V
- **Gate drive voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 370mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 11A
- **Technology**: SJ_Multi-EPI (Multilayer EPI technology)
Domain and module applications：
III. Application fields and module examples
1. **High voltage switching and protection**:
The 650V drain-source breakdown voltage of IPD60R385CP-VB makes it very suitable for high voltage switching applications, such as high voltage power switches and protection circuits. Its high voltage withstand performance can provide stable switching operation in high voltage environments, ensuring the safety and reliability of the system.
2. **Power inverter**:
In power inverters, especially in applications that need to handle high voltage DC, IPD60R385CP-VB can provide stable voltage and current control. Its high voltage withstand capability and stability enable it to efficiently convert electrical energy in the inverter and improve the overall performance of the system.
3. **Power management system**:
This MOSFET is suitable for high voltage power management systems, such as high voltage power regulators and power protection devices. Due to its high voltage breakdown capability and stable on-resistance, it can provide reliable switching control in power management, enhancing the stability and efficiency of the system.
4. **Electric Vehicle and Industrial Motor Control**:
IPD60R385CP-VB can be used for high voltage control systems of electric vehicles and industrial motors. Its high withstand voltage and current capabilities can effectively handle the starting and running requirements of high power motors, providing stable switching and control functions in electric vehicle drives and industrial motor control.
1. **High voltage switching and protection**:
The 650V drain-source breakdown voltage of IPD60R385CP-VB makes it very suitable for high voltage switching applications, such as high voltage power switches and protection circuits. Its high voltage withstand performance can provide stable switching operation in high voltage environments, ensuring the safety and reliability of the system.
2. **Power inverter**:
In power inverters, especially in applications that need to handle high voltage DC, IPD60R385CP-VB can provide stable voltage and current control. Its high voltage withstand capability and stability enable it to efficiently convert electrical energy in the inverter and improve the overall performance of the system.
3. **Power management system**:
This MOSFET is suitable for high voltage power management systems, such as high voltage power regulators and power protection devices. Due to its high voltage breakdown capability and stable on-resistance, it can provide reliable switching control in power management, enhancing the stability and efficiency of the system.
4. **Electric Vehicle and Industrial Motor Control**:
IPD60R385CP-VB can be used for high voltage control systems of electric vehicles and industrial motors. Its high withstand voltage and current capabilities can effectively handle the starting and running requirements of high power motors, providing stable switching and control functions in electric vehicle drives and industrial motor control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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