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IPD60R380P6-VB Product details
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Product Introduction - IPD60R380P6-VB
IPD60R380P6-VB is a high-voltage, high-efficiency single N-channel power MOSFET in TO252 package. With a drain-source withstand voltage of 650V and a drain current capability of 11A, this MOSFET is designed for high-voltage, high-power applications. It is manufactured using SJ_Multi-EPI (polysilicon technology) and has a low on-resistance (RDS(ON) of 370mΩ @ VGS=10V), enabling it to effectively control switching losses and provide stable performance in high-voltage environments.
IPD60R380P6-VB is a high-voltage, high-efficiency single N-channel power MOSFET in TO252 package. With a drain-source withstand voltage of 650V and a drain current capability of 11A, this MOSFET is designed for high-voltage, high-power applications. It is manufactured using SJ_Multi-EPI (polysilicon technology) and has a low on-resistance (RDS(ON) of 370mΩ @ VGS=10V), enabling it to effectively control switching losses and provide stable performance in high-voltage environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 11A | 370mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 370mΩ @ VGS=10V
- **Drain current (ID)**: 11A
- **Technology type**: SJ_Multi-EPI (polysilicon technology)
- **Thermal resistance**: Suitable for high power density applications with good heat dissipation performance
- **Package type**: TO252
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 370mΩ @ VGS=10V
- **Drain current (ID)**: 11A
- **Technology type**: SJ_Multi-EPI (polysilicon technology)
- **Thermal resistance**: Suitable for high power density applications with good heat dissipation performance
Domain and module applications：
Applications and module examples
1. **High-voltage power converter**
The high withstand voltage capability of the IPD60R380P6-VB makes it very suitable for use in high-voltage power converters, such as industrial power supplies and high-voltage power modules. Its low on-resistance and high current carrying capacity ensure high efficiency and stability of power conversion.
2. **Photovoltaic inverter**
In photovoltaic systems, the IPD60R380P6-VB can be used to handle high-voltage DC input and effectively convert power. Its high withstand voltage and low on-resistance characteristics make it excellent in high-voltage switching applications in photovoltaic inverters.
3. **Electric vehicle charging system**
The high voltage and high current capabilities of this MOSFET make it suitable for electric vehicle charging systems, capable of handling high voltages during charging, ensuring charging efficiency and system safety.
4. **Industrial Motor Drive**
In industrial motor drive modules, IPD60R380P6-VB provides reliable high-voltage switching functions, suitable for motor control applications requiring high withstand voltage and high current, such as power tools and automation equipment.
5. **Power Switch and Protection Circuit**
IPD60R380P6-VB can be used in high-voltage power switches and protection circuits, providing high-efficiency switching control, protecting circuits from overvoltage and short-circuit damage, and is suitable for power electronic equipment and high-voltage protection modules.
1. **High-voltage power converter**
The high withstand voltage capability of the IPD60R380P6-VB makes it very suitable for use in high-voltage power converters, such as industrial power supplies and high-voltage power modules. Its low on-resistance and high current carrying capacity ensure high efficiency and stability of power conversion.
2. **Photovoltaic inverter**
In photovoltaic systems, the IPD60R380P6-VB can be used to handle high-voltage DC input and effectively convert power. Its high withstand voltage and low on-resistance characteristics make it excellent in high-voltage switching applications in photovoltaic inverters.
3. **Electric vehicle charging system**
The high voltage and high current capabilities of this MOSFET make it suitable for electric vehicle charging systems, capable of handling high voltages during charging, ensuring charging efficiency and system safety.
4. **Industrial Motor Drive**
In industrial motor drive modules, IPD60R380P6-VB provides reliable high-voltage switching functions, suitable for motor control applications requiring high withstand voltage and high current, such as power tools and automation equipment.
5. **Power Switch and Protection Circuit**
IPD60R380P6-VB can be used in high-voltage power switches and protection circuits, providing high-efficiency switching control, protecting circuits from overvoltage and short-circuit damage, and is suitable for power electronic equipment and high-voltage protection modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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