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IPD60R380E6-VB Product details
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Product Introduction:
IPD60R380E6-VB is a high-voltage single N-channel MOSFET in TO252 package, designed for high-voltage applications. The maximum drain-source voltage (VDS) of this MOSFET is 650V, and the gate-source voltage range is ±30V, which is suitable for applications that require high voltage tolerance. Its turn-on threshold voltage is 3.5V, ensuring that it can be turned on at a lower gate voltage. IPD60R380E6-VB uses SJ_Multi-EPI technology, which enhances the voltage resistance of the device while providing a stable on-resistance (RDS(ON)). Although its on-resistance is 370mΩ (@VGS=10V), it can still effectively support higher current requirements (ID is 11A) in high-voltage applications.
IPD60R380E6-VB is a high-voltage single N-channel MOSFET in TO252 package, designed for high-voltage applications. The maximum drain-source voltage (VDS) of this MOSFET is 650V, and the gate-source voltage range is ±30V, which is suitable for applications that require high voltage tolerance. Its turn-on threshold voltage is 3.5V, ensuring that it can be turned on at a lower gate voltage. IPD60R380E6-VB uses SJ_Multi-EPI technology, which enhances the voltage resistance of the device while providing a stable on-resistance (RDS(ON)). Although its on-resistance is 370mΩ (@VGS=10V), it can still effectively support higher current requirements (ID is 11A) in high-voltage applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 11A | 370mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Parameter description:
- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Turn-on threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 370mΩ @ VGS=10V
- **Drain current (ID)**: 11A
- **Technology type**: SJ_Multi-EPI (multi-layer EPI technology)
- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Turn-on threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 370mΩ @ VGS=10V
- **Drain current (ID)**: 11A
- **Technology type**: SJ_Multi-EPI (multi-layer EPI technology)
Domain and module applications：
Application areas and modules:
1. **High-voltage power conversion**: The high withstand voltage characteristics of the IPD60R380E6-VB make it very suitable for high-voltage power conversion applications, such as high-voltage DC-DC converters and switching power supplies. It can handle power conversion at high voltages, ensure system stability and reduce power consumption.
2. **Motor drive system**: In motor drive systems that require high voltage and current, such as industrial motor drives, the IPD60R380E6-VB can provide reliable high-voltage switching control. Although its on-resistance is relatively high, it can still provide stable performance in high-voltage applications.
3. **Inverter application**: In inverters, such as solar inverters or wind power inverters, the high drain-source voltage and withstand voltage performance of this MOSFET can effectively handle the conversion process from DC to AC, ensuring stable operation and efficiency of the inverter.
4. **High-voltage switch**: In high-voltage switch modules, such as power transmission and distribution systems, the IPD60R380E6-VB can handle the switching requirements under high voltage, ensuring that the equipment can work reliably under high voltage and maintain good current control performance.
5. **Power management system**: Used in power management and protection systems, such as overvoltage protection and load switch control in high-voltage power systems, this MOSFET can provide stable high-voltage protection and efficient switching to ensure the reliability of the system in complex power environments.
1. **High-voltage power conversion**: The high withstand voltage characteristics of the IPD60R380E6-VB make it very suitable for high-voltage power conversion applications, such as high-voltage DC-DC converters and switching power supplies. It can handle power conversion at high voltages, ensure system stability and reduce power consumption.
2. **Motor drive system**: In motor drive systems that require high voltage and current, such as industrial motor drives, the IPD60R380E6-VB can provide reliable high-voltage switching control. Although its on-resistance is relatively high, it can still provide stable performance in high-voltage applications.
3. **Inverter application**: In inverters, such as solar inverters or wind power inverters, the high drain-source voltage and withstand voltage performance of this MOSFET can effectively handle the conversion process from DC to AC, ensuring stable operation and efficiency of the inverter.
4. **High-voltage switch**: In high-voltage switch modules, such as power transmission and distribution systems, the IPD60R380E6-VB can handle the switching requirements under high voltage, ensuring that the equipment can work reliably under high voltage and maintain good current control performance.
5. **Power management system**: Used in power management and protection systems, such as overvoltage protection and load switch control in high-voltage power systems, this MOSFET can provide stable high-voltage protection and efficient switching to ensure the reliability of the system in complex power environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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