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IPD60R380C6-VB Product details
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1. IPD60R380C6-VB Product Introduction
IPD60R380C6-VB is a high-voltage N-channel power MOSFET in TO252 package. This MOSFET is designed to handle high voltage applications and has a drain-source voltage (VDS) of 650V and a drain current (ID) handling capability of 11A. It utilizes SJ_Multi-EPI technology to improve its voltage resistance and switching efficiency. The on-resistance (RDS(ON)) of this MOSFET is 370mΩ (VGS=10V), which is suitable for high voltage and medium current applications. The gate threshold voltage (Vth) is 3.5V, which enables reliable switching operation under standard gate drive voltage.
IPD60R380C6-VB is a high-voltage N-channel power MOSFET in TO252 package. This MOSFET is designed to handle high voltage applications and has a drain-source voltage (VDS) of 650V and a drain current (ID) handling capability of 11A. It utilizes SJ_Multi-EPI technology to improve its voltage resistance and switching efficiency. The on-resistance (RDS(ON)) of this MOSFET is 370mΩ (VGS=10V), which is suitable for high voltage and medium current applications. The gate threshold voltage (Vth) is 3.5V, which enables reliable switching operation under standard gate drive voltage.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 11A | 370mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. IPD60R380C6-VB Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single channel N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 370mΩ @ VGS=10V
- **Drain current (ID)**: 11A
- **Technology**: SJ_Multi-EPI technology
- **Thermal resistance (Rth)**: Depends on the specific heat dissipation conditions, usually designed for effective heat dissipation requirements in high-voltage applications
- **Package type**: TO252
- **Configuration**: Single channel N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 370mΩ @ VGS=10V
- **Drain current (ID)**: 11A
- **Technology**: SJ_Multi-EPI technology
- **Thermal resistance (Rth)**: Depends on the specific heat dissipation conditions, usually designed for effective heat dissipation requirements in high-voltage applications
Domain and module applications：
III. Applications and module examples
1. **High-voltage power switch**
The high drain-source voltage capability of the IPD60R380C6-VB makes it ideal for high-voltage power switch applications. This includes industrial power supplies, switch mode power supplies (SMPS), and other power converters that need to handle high voltages. It provides reliable switching performance and remains stable under high-voltage operation.
2. **Motor drive and control**
In motor drive applications, especially drive systems that require high voltages, the IPD60R380C6-VB can be used for power switches and protection circuits for motors. It is able to handle high voltages while providing stable current control, and is suitable for industrial motors and high-voltage motor drive systems.
3. **Energy management system**
This MOSFET is suitable for high-voltage power switches and protection circuits in energy management systems. Its high voltage tolerance and stable switching performance make it suitable for use in solar inverters, battery management systems, and other energy conversion and storage applications.
4. **High-voltage electrical equipment**
IPD60R380C6-VB can be used in a variety of high-voltage electrical equipment, such as high-voltage relays, protection switches, and high-voltage converters. These applications require reliable switching of current under high voltage conditions, and the high voltage withstand capability and low on-resistance of this MOSFET make it an ideal choice.
1. **High-voltage power switch**
The high drain-source voltage capability of the IPD60R380C6-VB makes it ideal for high-voltage power switch applications. This includes industrial power supplies, switch mode power supplies (SMPS), and other power converters that need to handle high voltages. It provides reliable switching performance and remains stable under high-voltage operation.
2. **Motor drive and control**
In motor drive applications, especially drive systems that require high voltages, the IPD60R380C6-VB can be used for power switches and protection circuits for motors. It is able to handle high voltages while providing stable current control, and is suitable for industrial motors and high-voltage motor drive systems.
3. **Energy management system**
This MOSFET is suitable for high-voltage power switches and protection circuits in energy management systems. Its high voltage tolerance and stable switching performance make it suitable for use in solar inverters, battery management systems, and other energy conversion and storage applications.
4. **High-voltage electrical equipment**
IPD60R380C6-VB can be used in a variety of high-voltage electrical equipment, such as high-voltage relays, protection switches, and high-voltage converters. These applications require reliable switching of current under high voltage conditions, and the high voltage withstand capability and low on-resistance of this MOSFET make it an ideal choice.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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