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IPD60R1K4C6-VB Product details
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1. IPD60R1K4C6-VB Product Introduction:
IPD60R1K4C6-VB is a single N-channel power MOSFET in TO252 package, designed for high voltage applications with a maximum drain-source voltage (VDS) of 650V. The device supports a gate-source voltage of ±30V and a turn-on threshold voltage (Vth) of 3.5V. IPD60R1K4C6-VB uses SJ_Multi-EPI technology to provide higher current handling capability and lower on-resistance. Although its on-resistance (RDS(ON)) is 1000mΩ (@VGS=10V), its maximum drain current of 5A makes it suitable for applications that require high voltage but relatively low current. This MOSFET is suitable for use in high voltage power switches and protection circuits.
IPD60R1K4C6-VB is a single N-channel power MOSFET in TO252 package, designed for high voltage applications with a maximum drain-source voltage (VDS) of 650V. The device supports a gate-source voltage of ±30V and a turn-on threshold voltage (Vth) of 3.5V. IPD60R1K4C6-VB uses SJ_Multi-EPI technology to provide higher current handling capability and lower on-resistance. Although its on-resistance (RDS(ON)) is 1000mΩ (@VGS=10V), its maximum drain current of 5A makes it suitable for applications that require high voltage but relatively low current. This MOSFET is suitable for use in high voltage power switches and protection circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. IPD60R1K4C6-VB Detailed parameter description:
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Turn-on threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 1000mΩ @ VGS=10V
- **Maximum drain current (ID)**: 5A
- **Technology type**: SJ_Multi-EPI
- **Maximum power consumption**: Depends on specific application and heat dissipation design
- **Operating temperature range**: -55°C to 175°C
- **Typical applications**: high voltage switches, protection circuits, inverters, etc.
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Turn-on threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 1000mΩ @ VGS=10V
- **Maximum drain current (ID)**: 5A
- **Technology type**: SJ_Multi-EPI
- **Maximum power consumption**: Depends on specific application and heat dissipation design
- **Operating temperature range**: -55°C to 175°C
- **Typical applications**: high voltage switches, protection circuits, inverters, etc.
Domain and module applications：
3. Application fields and module examples:
1. **High voltage switch**:
The high drain-source voltage (650V) of IPD60R1K4C6-VB makes it very suitable for high voltage switching applications. In industrial power supplies and power converters, this MOSFET can effectively handle high voltage loads to ensure safe and stable operation of equipment. It helps achieve high voltage isolation and switch control in these applications.
2. **Protection circuit**:
In the protection circuit of high voltage power supply, IPD60R1K4C6-VB can provide effective protection in overvoltage or overcurrent conditions due to its high voltage tolerance and good switching performance. It can be used as an overvoltage protection device to prevent the power system from being damaged, thereby improving the reliability and safety of the system.
3. **Inverter**:
In inverter systems, especially inverters for high voltage DC-AC conversion, IPD60R1K4C6-VB can handle high voltage and current, ensuring that the inverter has efficient performance during the conversion process. It can withstand voltages up to 650V and is suitable for use in high-voltage applications such as photovoltaic inverters and wind power generation systems.
4. **Power Management**:
For power management systems that require high voltage outputs, such as high-voltage power modules and motor drive controllers, the IPD60R1K4C6-VB provides the necessary current handling capability and stability. Although its lower on-resistance will cause some power loss, its high voltage capability makes it still excel in these high-voltage applications.
The IPD60R1K4C6-VB has become a reliable choice in high-voltage applications due to its high voltage tolerance and moderate on-resistance.
1. **High voltage switch**:
The high drain-source voltage (650V) of IPD60R1K4C6-VB makes it very suitable for high voltage switching applications. In industrial power supplies and power converters, this MOSFET can effectively handle high voltage loads to ensure safe and stable operation of equipment. It helps achieve high voltage isolation and switch control in these applications.
2. **Protection circuit**:
In the protection circuit of high voltage power supply, IPD60R1K4C6-VB can provide effective protection in overvoltage or overcurrent conditions due to its high voltage tolerance and good switching performance. It can be used as an overvoltage protection device to prevent the power system from being damaged, thereby improving the reliability and safety of the system.
3. **Inverter**:
In inverter systems, especially inverters for high voltage DC-AC conversion, IPD60R1K4C6-VB can handle high voltage and current, ensuring that the inverter has efficient performance during the conversion process. It can withstand voltages up to 650V and is suitable for use in high-voltage applications such as photovoltaic inverters and wind power generation systems.
4. **Power Management**:
For power management systems that require high voltage outputs, such as high-voltage power modules and motor drive controllers, the IPD60R1K4C6-VB provides the necessary current handling capability and stability. Although its lower on-resistance will cause some power loss, its high voltage capability makes it still excel in these high-voltage applications.
The IPD60R1K4C6-VB has become a reliable choice in high-voltage applications due to its high voltage tolerance and moderate on-resistance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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