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IPD50R950CE-VB Product details
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Product Introduction
IPD50R950CE-VB is a high voltage single N-channel MOSFET in TO252 package. It has a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of ±30V, and a threshold voltage (Vth) of 3.5V. The on-resistance (RDS(ON)) of this MOSFET is 1000mΩ @ VGS=10V, and the maximum drain current (ID) is 5A. It uses SJ_Multi-EPI technology and is designed for high voltage and high power applications, suitable for providing reliable performance in harsh environments. IPD50R950CE-VB is mainly used for high voltage switching and power conversion applications, with high voltage tolerance and stability.
IPD50R950CE-VB is a high voltage single N-channel MOSFET in TO252 package. It has a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of ±30V, and a threshold voltage (Vth) of 3.5V. The on-resistance (RDS(ON)) of this MOSFET is 1000mΩ @ VGS=10V, and the maximum drain current (ID) is 5A. It uses SJ_Multi-EPI technology and is designed for high voltage and high power applications, suitable for providing reliable performance in harsh environments. IPD50R950CE-VB is mainly used for high voltage switching and power conversion applications, with high voltage tolerance and stability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Parameter description
1. **Package type**: TO252
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 650V
4. **Gate-source voltage (VGS)**: ±30V
5. **Threshold voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**:
- 1000mΩ @ VGS=10V
7. **Drain current (ID)**: 5A
8. **Technology**: SJ_Multi-EPI
9. **Gate charge (Qg)**: Moderate, suitable for high voltage switching
10. **Operating temperature range**: -55°C to 175°C
11. **Power consumption (Ptot)**: Suitable for high power applications with good heat dissipation performance
1. **Package type**: TO252
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 650V
4. **Gate-source voltage (VGS)**: ±30V
5. **Threshold voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**:
- 1000mΩ @ VGS=10V
7. **Drain current (ID)**: 5A
8. **Technology**: SJ_Multi-EPI
9. **Gate charge (Qg)**: Moderate, suitable for high voltage switching
10. **Operating temperature range**: -55°C to 175°C
11. **Power consumption (Ptot)**: Suitable for high power applications with good heat dissipation performance
Domain and module applications：
Applicable fields and modules
1. **Power management system**: IPD50R950CE-VB performs well in high voltage switching power supplies and inverters. For example, in high voltage DC to AC (DC-AC) inverters, the high withstand voltage and stability of MOSFET ensure the safe and reliable operation of the system in high voltage environments, helping to improve power efficiency and reduce power loss.
2. **Industrial power**: In industrial power supplies and power conversion modules, such as inverters and power adapters, this MOSFET can handle high voltage and medium current loads, ensuring the stability and reliability of the power system, especially in applications that require high voltage protection.
3. **Home appliances**: In high voltage home appliances, such as high voltage electric heaters and power tools, IPD50R950CE-VB can be used as a power switch. Its high drain-source voltage capability and good conduction characteristics make it suitable for operation in these high voltage loads, improving the overall performance and life of the equipment.
4. **Automotive Electronics**: In automotive electronic systems, such as electric vehicle chargers and high-voltage power management systems, this MOSFET can provide reliable switching capability and high voltage tolerance, helping to improve the efficiency and safety of electric vehicle systems.
1. **Power management system**: IPD50R950CE-VB performs well in high voltage switching power supplies and inverters. For example, in high voltage DC to AC (DC-AC) inverters, the high withstand voltage and stability of MOSFET ensure the safe and reliable operation of the system in high voltage environments, helping to improve power efficiency and reduce power loss.
2. **Industrial power**: In industrial power supplies and power conversion modules, such as inverters and power adapters, this MOSFET can handle high voltage and medium current loads, ensuring the stability and reliability of the power system, especially in applications that require high voltage protection.
3. **Home appliances**: In high voltage home appliances, such as high voltage electric heaters and power tools, IPD50R950CE-VB can be used as a power switch. Its high drain-source voltage capability and good conduction characteristics make it suitable for operation in these high voltage loads, improving the overall performance and life of the equipment.
4. **Automotive Electronics**: In automotive electronic systems, such as electric vehicle chargers and high-voltage power management systems, this MOSFET can provide reliable switching capability and high voltage tolerance, helping to improve the efficiency and safety of electric vehicle systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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