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IPD50R520CP-VB Product details
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Product Introduction:
IPD50R520CP-VB is a single N-channel MOSFET in TO252 package type. This MOSFET adopts SJ_Multi-EPI technology, can withstand drain-source voltage (VDS) up to 650V, and has a continuous drain current (ID) of 9A. Its gate threshold voltage (Vth) is 3.5V, which is suitable for use in higher voltage applications. Although its on-resistance (RDS(ON)) is 500mΩ @ VGS=10V, which is higher than modern MOSFETs, it still performs well in high voltage applications and is suitable for power management and switching applications that require high voltage resistance.
IPD50R520CP-VB is a single N-channel MOSFET in TO252 package type. This MOSFET adopts SJ_Multi-EPI technology, can withstand drain-source voltage (VDS) up to 650V, and has a continuous drain current (ID) of 9A. Its gate threshold voltage (Vth) is 3.5V, which is suitable for use in higher voltage applications. Although its on-resistance (RDS(ON)) is 500mΩ @ VGS=10V, which is higher than modern MOSFETs, it still performs well in high voltage applications and is suitable for power management and switching applications that require high voltage resistance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | 500mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description:
- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 500mΩ @ VGS=10V
- **Continuous drain current (ID)**: 9A
- **Technology**: SJ_Multi-EPI technology
- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 500mΩ @ VGS=10V
- **Continuous drain current (ID)**: 9A
- **Technology**: SJ_Multi-EPI technology
Domain and module applications：
Application areas and module examples:
1. **High-voltage power converter**: The high withstand voltage characteristics of the IPD50R520CP-VB make it ideal for high-voltage power converters, such as AC-DC converters and DC-DC boost converters. In these applications, it can handle high-voltage switching operations to ensure the safety and stability of the power system.
2. **Power management system**: In power management and distribution systems, especially where high-voltage isolation is required, this MOSFET can stably switch high-voltage loads and is suitable for power switches and power control modules to help manage and distribute electrical energy.
3. **Industrial power**: The high withstand voltage and relatively high RDS(ON) of the IPD50R520CP-VB make it suitable for industrial power applications, such as high-voltage motor drive systems and power conversion devices, which can operate stably in high-voltage environments.
4. **Home appliance power management**: In home appliances, such as high-voltage lamps and electrical heating equipment, this MOSFET can provide reliable high-voltage switching control to ensure the normal operation of the equipment and improve energy efficiency.
1. **High-voltage power converter**: The high withstand voltage characteristics of the IPD50R520CP-VB make it ideal for high-voltage power converters, such as AC-DC converters and DC-DC boost converters. In these applications, it can handle high-voltage switching operations to ensure the safety and stability of the power system.
2. **Power management system**: In power management and distribution systems, especially where high-voltage isolation is required, this MOSFET can stably switch high-voltage loads and is suitable for power switches and power control modules to help manage and distribute electrical energy.
3. **Industrial power**: The high withstand voltage and relatively high RDS(ON) of the IPD50R520CP-VB make it suitable for industrial power applications, such as high-voltage motor drive systems and power conversion devices, which can operate stably in high-voltage environments.
4. **Home appliance power management**: In home appliances, such as high-voltage lamps and electrical heating equipment, this MOSFET can provide reliable high-voltage switching control to ensure the normal operation of the equipment and improve energy efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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