IPD50R500CE-VB Product details
Product introduction:
The IPD50R500CE-VB is a high voltage N-channel MOSFET in a TO252 package. It has a drain-source voltage (VDS) of up to 500V, suitable for applications that need to handle high voltages. The gate-source voltage (VGS) of this MOSFET allows up to ±30V, which can meet various driving requirements. The gate threshold voltage of the IPD50R500CE-VB is 3.5V, and it uses advanced SJ_Multi-EPI technology to achieve excellent high-voltage characteristics. Its on-resistance (RDS(ON)) is 550mΩ at VGS = 10V, and it can carry up to 7A of current. These characteristics make the IPD50R500CE-VB excel in high voltage and high power applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 500V | 3.5V | 7A | 550mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 500V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 500V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
1. **Package type**: TO252
2. **Polarity**: N-channel
3. **Drain-source voltage (VDS)**: 500V
4. **Gate-source voltage (VGS)**: ±30V
5. **Gate threshold voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**:
- 550mΩ @ VGS = 10V
7. **Drain current (ID)**: 7A
8. **Technology type**: SJ_Multi-EPI
9. **Operating temperature range**: -55°C to 175°C
10. **Power dissipation (Ptot)**: Typically 50W
11. **Maximum pulse current (ID, pulse)**: up to 25A
12. **Input capacitance (Ciss)**: about 2800pF
13. **Reverse recovery time (Trr)**: typical value is about 70ns
14. **Gate charge (Qg)**: typical value is 80nC
Domain and module applications:
1. **Switching Power Supply (SMPS)**:
IPD50R500CE-VB In switching power supplies, such as high-voltage DC-DC converters or high-voltage AC-DC converters, it is capable of handling high voltages and high currents, ensuring efficient power conversion and stable power output. Its high voltage carrying capability and low on-resistance make it suitable for use in high-power applications.
2. **Industrial Power Management**:
In industrial power management systems, this MOSFET can be used for power conversion and control, such as the main switch in high-voltage power supply systems. Its high voltage and high current characteristics make it suitable for industrial equipment that requires high reliability and durability.
3. **Electric Vehicle (EV)**:
In electric vehicle systems, IPD50R500CE-VB can be used in battery management systems (BMS) or motor drive control modules. Its high voltage tolerance and reliability are crucial to ensure the safety and stability of electric vehicles in high-voltage working environments.
4. **Motor drive control**:
In motor drive applications that require high voltage control, such as fan motors or pump motors, the IPD50R500CE-VB can provide stable switching performance and high voltage resistance, thereby optimizing the motor's operating efficiency and stability.
With its high voltage tolerance and good conduction performance, the IPD50R500CE-VB performs well in various applications that need to handle high voltage and high current, and is an ideal choice for efficient and reliable power management.
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