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IPD50R399CP-VB Product details
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IPD50R399CP-VB MOSFET Product Introduction
IPD50R399CP-VB is a high voltage N-channel MOSFET in TO252 package, designed for high voltage applications. This MOSFET supports drain-source voltage (VDS) up to 650V and gate-source voltage (VGS) of ±30V, and uses SJ_Multi-EPI technology, suitable for important occasions requiring high voltage resistance and stability. Its higher on-resistance (RDS(ON)) enables it to provide reliable switching performance in high voltage scenarios.
IPD50R399CP-VB is a high voltage N-channel MOSFET in TO252 package, designed for high voltage applications. This MOSFET supports drain-source voltage (VDS) up to 650V and gate-source voltage (VGS) of ±30V, and uses SJ_Multi-EPI technology, suitable for important occasions requiring high voltage resistance and stability. Its higher on-resistance (RDS(ON)) enables it to provide reliable switching performance in high voltage scenarios.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 11A | 370mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Polarity configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Throw-on voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 370mΩ @ VGS=10V
- **Maximum drain current (ID)**: 11A
- **Technology**: SJ_Multi-EPI
- **Package type**: TO252
- **Polarity configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Throw-on voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 370mΩ @ VGS=10V
- **Maximum drain current (ID)**: 11A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Application fields and module examples
1. **High-voltage power management**: IPD50R399CP-VB is widely used in high-voltage power converters, especially in industrial equipment and power electronic equipment. Its high withstand voltage of 650V enables it to withstand the stress in high-voltage applications, ensuring the stability and safety of power conversion.
2. **Inverters and power modules**: In solar inverters and other power modules, this MOSFET is able to handle high voltage inputs while maintaining a relatively low on-resistance to ensure efficient energy conversion. Its design is suitable for high-power circuits that require high withstand voltage and stability.
3. **Power switching equipment**: Used in power switching equipment such as circuit breakers and power switches, this MOSFET is able to handle high voltage switching operations, and its high withstand voltage characteristics ensure reliability under high voltage conditions.
4. **Industrial control systems**: In industrial control systems, this MOSFET can be used to control high voltage loads such as motor drives and heater controls. Its high voltage withstand capability and stability make it suitable for critical applications in industrial environments.
The high voltage withstand capability and moderate on-resistance of IPD50R399CP-VB make it excel in high voltage application scenarios, and it can provide stable performance in various industrial and power applications that require high voltage switching and reliability.
1. **High-voltage power management**: IPD50R399CP-VB is widely used in high-voltage power converters, especially in industrial equipment and power electronic equipment. Its high withstand voltage of 650V enables it to withstand the stress in high-voltage applications, ensuring the stability and safety of power conversion.
2. **Inverters and power modules**: In solar inverters and other power modules, this MOSFET is able to handle high voltage inputs while maintaining a relatively low on-resistance to ensure efficient energy conversion. Its design is suitable for high-power circuits that require high withstand voltage and stability.
3. **Power switching equipment**: Used in power switching equipment such as circuit breakers and power switches, this MOSFET is able to handle high voltage switching operations, and its high withstand voltage characteristics ensure reliability under high voltage conditions.
4. **Industrial control systems**: In industrial control systems, this MOSFET can be used to control high voltage loads such as motor drives and heater controls. Its high voltage withstand capability and stability make it suitable for critical applications in industrial environments.
The high voltage withstand capability and moderate on-resistance of IPD50R399CP-VB make it excel in high voltage application scenarios, and it can provide stable performance in various industrial and power applications that require high voltage switching and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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