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IPD50R380CE-VB Product details
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1. IPD50R380CE-VB Product Introduction
IPD50R380CE-VB is a high-voltage single N-channel MOSFET in TO252 package. Designed for high-voltage applications, this MOSFET has a maximum drain-source voltage of 650V and a drain current carrying capacity of up to 11A. Its gate-source voltage range is ±30V, the gate threshold voltage is 3.5V, and the on-resistance is 370mΩ (at VGS=10V). Using SJ_Multi-EPI technology, this MOSFET provides excellent voltage resistance and stability, and is very suitable for applications requiring high voltage resistance and high reliability.
IPD50R380CE-VB is a high-voltage single N-channel MOSFET in TO252 package. Designed for high-voltage applications, this MOSFET has a maximum drain-source voltage of 650V and a drain current carrying capacity of up to 11A. Its gate-source voltage range is ±30V, the gate threshold voltage is 3.5V, and the on-resistance is 370mΩ (at VGS=10V). Using SJ_Multi-EPI technology, this MOSFET provides excellent voltage resistance and stability, and is very suitable for applications requiring high voltage resistance and high reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 11A | 370mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. IPD50R380CE-VB Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 370mΩ@VGS=10V
- **Drain current (ID)**: 11A
- **Technology**: SJ_Multi-EPI (polysilicon technology)
- **Other features**: High withstand voltage, good thermal stability, suitable for high voltage applications.
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 370mΩ@VGS=10V
- **Drain current (ID)**: 11A
- **Technology**: SJ_Multi-EPI (polysilicon technology)
- **Other features**: High withstand voltage, good thermal stability, suitable for high voltage applications.
Domain and module applications：
III. Application fields and module examples of IPD50R380CE-VB
1. **Power switch**: Due to its high voltage withstand capability of up to 650V, IPD50R380CE-VB is very suitable for high-voltage power switches such as AC-DC converters and high-voltage DC-DC converters. It can effectively manage high-voltage power while maintaining stable performance and low power consumption.
2. **Inverter**: In solar inverter and other high-power inverter applications, the high voltage withstand and high current carrying capacity of this MOSFET make it an ideal choice. It can withstand the stress in the high-voltage working environment and ensure the efficient operation of the inverter.
3. **Power tool**: In power tools that require high voltage control, such as electric drills or electric saws, IPD50R380CE-VB can be used as a switch controller. Its high voltage withstand performance and stability ensure the safety and reliability of the tools.
4. **Industrial power**: In industrial power systems, this MOSFET can be used for high voltage power switching and protection functions. Its high withstand voltage characteristics can cope with the high voltage environment in industrial applications and provide stable power management.
Applications in these fields take full advantage of the high withstand voltage and stability of the IPD50R380CE-VB, making it perform well in situations that need to handle high voltage and high power.
1. **Power switch**: Due to its high voltage withstand capability of up to 650V, IPD50R380CE-VB is very suitable for high-voltage power switches such as AC-DC converters and high-voltage DC-DC converters. It can effectively manage high-voltage power while maintaining stable performance and low power consumption.
2. **Inverter**: In solar inverter and other high-power inverter applications, the high voltage withstand and high current carrying capacity of this MOSFET make it an ideal choice. It can withstand the stress in the high-voltage working environment and ensure the efficient operation of the inverter.
3. **Power tool**: In power tools that require high voltage control, such as electric drills or electric saws, IPD50R380CE-VB can be used as a switch controller. Its high voltage withstand performance and stability ensure the safety and reliability of the tools.
4. **Industrial power**: In industrial power systems, this MOSFET can be used for high voltage power switching and protection functions. Its high withstand voltage characteristics can cope with the high voltage environment in industrial applications and provide stable power management.
Applications in these fields take full advantage of the high withstand voltage and stability of the IPD50R380CE-VB, making it perform well in situations that need to handle high voltage and high power.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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