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IPD50R1K4CE-VB Product details
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Product Introduction - IPD50R1K4CE-VB
IPD50R1K4CE-VB is a high voltage single N-channel power MOSFET in TO252 package, designed for high voltage and high reliability applications. This MOSFET has a drain-source voltage withstand capability of 650V and a drain current carrying capacity of up to 5A. It is manufactured based on SJ_Multi-EPI (polysilicon technology) technology and has stable performance and high switching efficiency. It is suitable for power management and switching applications that require high voltage withstand and reliability.
IPD50R1K4CE-VB is a high voltage single N-channel power MOSFET in TO252 package, designed for high voltage and high reliability applications. This MOSFET has a drain-source voltage withstand capability of 650V and a drain current carrying capacity of up to 5A. It is manufactured based on SJ_Multi-EPI (polysilicon technology) technology and has stable performance and high switching efficiency. It is suitable for power management and switching applications that require high voltage withstand and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1000mΩ @ VGS=10V
- **Drain current (ID)**: 5A
- **Technology type**: SJ_Multi-EPI (polysilicon technology)
- **Thermal resistance**: Suitable for high power density applications with low thermal resistance characteristics
- **Package type**: TO252
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1000mΩ @ VGS=10V
- **Drain current (ID)**: 5A
- **Technology type**: SJ_Multi-EPI (polysilicon technology)
- **Thermal resistance**: Suitable for high power density applications with low thermal resistance characteristics
Domain and module applications：
Applications and module examples
1. **High voltage power converter**
The high withstand voltage characteristics of the IPD50R1K4CE-VB make it ideal for use in high voltage power converters such as industrial power supplies, UPS systems, and power inverters. Its ability to stably handle power conversion under high voltage conditions helps improve system reliability and safety.
2. **Electric vehicle charging system**
In the charging system of electric vehicles, the IPD50R1K4CE-VB can be used in high voltage switching applications to ensure high efficiency and safety during battery charging. Its high drain-source voltage capability enables it to handle the high voltage generated during the charging process.
3. **Photovoltaic inverter**
This MOSFET is suitable for high voltage switching modules in photovoltaic inverters, capable of handling high voltage DC input in photovoltaic systems, ensuring power conversion efficiency and system stability.
4. **Industrial control systems**
In industrial control systems, the IPD50R1K4CE-VB can be used for high voltage switching and control applications to ensure reliable system operation. Its high withstand voltage characteristics enable it to handle high voltage loads in industrial environments.
5. **High voltage switching circuits**
Due to its high withstand voltage and high current carrying capacity, the IPD50R1K4CE-VB is suitable for various high voltage switching circuits, such as power switches, protection circuits, and switch modules in power electronic equipment, providing stable and reliable switching operations.
1. **High voltage power converter**
The high withstand voltage characteristics of the IPD50R1K4CE-VB make it ideal for use in high voltage power converters such as industrial power supplies, UPS systems, and power inverters. Its ability to stably handle power conversion under high voltage conditions helps improve system reliability and safety.
2. **Electric vehicle charging system**
In the charging system of electric vehicles, the IPD50R1K4CE-VB can be used in high voltage switching applications to ensure high efficiency and safety during battery charging. Its high drain-source voltage capability enables it to handle the high voltage generated during the charging process.
3. **Photovoltaic inverter**
This MOSFET is suitable for high voltage switching modules in photovoltaic inverters, capable of handling high voltage DC input in photovoltaic systems, ensuring power conversion efficiency and system stability.
4. **Industrial control systems**
In industrial control systems, the IPD50R1K4CE-VB can be used for high voltage switching and control applications to ensure reliable system operation. Its high withstand voltage characteristics enable it to handle high voltage loads in industrial environments.
5. **High voltage switching circuits**
Due to its high withstand voltage and high current carrying capacity, the IPD50R1K4CE-VB is suitable for various high voltage switching circuits, such as power switches, protection circuits, and switch modules in power electronic equipment, providing stable and reliable switching operations.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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