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IPD50N06S3L-08-VB Product details
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1. IPD50N06S3L-08-VB Product Introduction
IPD50N06S3L-08-VB is a high-performance N-channel power MOSFET in TO252 package. This MOSFET is designed for high-efficiency applications and can operate stably at a drain-source voltage (VDS) of 60V and a drain current (ID) of 58A. It uses advanced trench technology and has a low on-resistance, thereby reducing power consumption and improving system efficiency. The on-resistance (RDS(ON)) of this MOSFET is 13mΩ (VGS=4.5V) and 10mΩ (VGS=10V), respectively, which is suitable for applications requiring high current and low power loss. Its gate threshold voltage (Vth) is 2.5V, ensuring efficient switching even at lower gate drive voltages.
IPD50N06S3L-08-VB is a high-performance N-channel power MOSFET in TO252 package. This MOSFET is designed for high-efficiency applications and can operate stably at a drain-source voltage (VDS) of 60V and a drain current (ID) of 58A. It uses advanced trench technology and has a low on-resistance, thereby reducing power consumption and improving system efficiency. The on-resistance (RDS(ON)) of this MOSFET is 13mΩ (VGS=4.5V) and 10mΩ (VGS=10V), respectively, which is suitable for applications requiring high current and low power loss. Its gate threshold voltage (Vth) is 2.5V, ensuring efficient switching even at lower gate drive voltages.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. IPD50N06S3L-08-VB Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single channel N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**: 13mΩ @ VGS=4.5V
- **On-resistance (RDS(ON))**: 10mΩ @ VGS=10V
- **Drain current (ID)**: 58A
- **Technology**: Trench technology
- **Thermal resistance (Rth)**: Depends on the specific heat dissipation conditions, usually designed for effective heat dissipation requirements in high power applications
- **Package type**: TO252
- **Configuration**: Single channel N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**: 13mΩ @ VGS=4.5V
- **On-resistance (RDS(ON))**: 10mΩ @ VGS=10V
- **Drain current (ID)**: 58A
- **Technology**: Trench technology
- **Thermal resistance (Rth)**: Depends on the specific heat dissipation conditions, usually designed for effective heat dissipation requirements in high power applications
Domain and module applications：
3. Application fields and module examples
1. **Power management and switching power supply**
The low on-resistance and high current handling capability of IPD50N06S3L-08-VB make it very suitable for switching power supply (SMPS) and other power management applications. It can effectively reduce power loss and improve conversion efficiency, and is suitable for industrial power modules and high-performance consumer electronic devices.
2. **Motor drive and control**
In motor drive systems, this MOSFET provides high current capability and low on-resistance, which helps to achieve efficient motor control. It can be used for speed control and direction adjustment of motors, enhancing the performance and reliability of motor drive systems.
3. **Automotive electronics applications**
IPD50N06S3L-08-VB can provide stable power switching in automotive electronics, suitable for battery management systems and electric control modules of electric vehicles. Its high current carrying capacity and low power consumption characteristics make it suitable for high-load circuits in automobiles.
4. **Smart Home and Automation System**
In smart home and automation systems, this MOSFET can be used in various switch control modules, such as lighting control, electric curtains, etc. Its efficient switching performance and reliable current handling capability ensure the stability and fast response of the system, which is suitable for demanding home automation scenarios.
1. **Power management and switching power supply**
The low on-resistance and high current handling capability of IPD50N06S3L-08-VB make it very suitable for switching power supply (SMPS) and other power management applications. It can effectively reduce power loss and improve conversion efficiency, and is suitable for industrial power modules and high-performance consumer electronic devices.
2. **Motor drive and control**
In motor drive systems, this MOSFET provides high current capability and low on-resistance, which helps to achieve efficient motor control. It can be used for speed control and direction adjustment of motors, enhancing the performance and reliability of motor drive systems.
3. **Automotive electronics applications**
IPD50N06S3L-08-VB can provide stable power switching in automotive electronics, suitable for battery management systems and electric control modules of electric vehicles. Its high current carrying capacity and low power consumption characteristics make it suitable for high-load circuits in automobiles.
4. **Smart Home and Automation System**
In smart home and automation systems, this MOSFET can be used in various switch control modules, such as lighting control, electric curtains, etc. Its efficient switching performance and reliable current handling capability ensure the stability and fast response of the system, which is suitable for demanding home automation scenarios.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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