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IPD50N06S3L-06-VB Product details
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1. IPD50N06S3L-06-VB Product Introduction:
IPD50N06S3L-06-VB is a single N-channel power MOSFET in TO252 package, designed for 60V applications. The device operates at a gate-source voltage of ±20V and has a turn-on threshold voltage of 2.5V. It uses advanced Trench technology to optimize current handling capability and on-resistance, with a maximum drain current of 58A. The on-resistance (RDS(ON)) is 13mΩ at a gate-source voltage of 4.5V and 10mΩ at a gate-source voltage of 10V. IPD50N06S3L-06-VB has good switching performance and low conduction loss, and is suitable for a variety of high-efficiency power and load switching applications.
IPD50N06S3L-06-VB is a single N-channel power MOSFET in TO252 package, designed for 60V applications. The device operates at a gate-source voltage of ±20V and has a turn-on threshold voltage of 2.5V. It uses advanced Trench technology to optimize current handling capability and on-resistance, with a maximum drain current of 58A. The on-resistance (RDS(ON)) is 13mΩ at a gate-source voltage of 4.5V and 10mΩ at a gate-source voltage of 10V. IPD50N06S3L-06-VB has good switching performance and low conduction loss, and is suitable for a variety of high-efficiency power and load switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. IPD50N06S3L-06-VB Detailed parameter description:
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Turning threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 13mΩ @ VGS=4.5V
- 10mΩ @ VGS=10V
- **Maximum drain current (ID)**: 58A
- **Technology type**: Trench technology
- **Maximum power consumption**: Depends on specific application and heat dissipation design
- **Operating temperature range**: -55°C to 175°C
- **Typical applications**: DC-DC converters, load switches, synchronous rectification, etc.
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Turning threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 13mΩ @ VGS=4.5V
- 10mΩ @ VGS=10V
- **Maximum drain current (ID)**: 58A
- **Technology type**: Trench technology
- **Maximum power consumption**: Depends on specific application and heat dissipation design
- **Operating temperature range**: -55°C to 175°C
- **Typical applications**: DC-DC converters, load switches, synchronous rectification, etc.
Domain and module applications：
3. Application fields and module examples:
1. **DC-DC converter**:
IPD50N06S3L-06-VB is suitable for use in DC-DC converters, especially in applications that need to handle higher voltages (up to 60V) and larger currents (58A). Its low RDS(ON) characteristics help reduce power losses and improve overall system efficiency, making it particularly suitable for use in power management modules such as computer servers, network equipment, and high-efficiency power adapters.
2. **Load switch**:
The high current handling capability and low on-resistance of this MOSFET make it an excellent performer in load switch applications. It is suitable for use in a variety of industrial control systems and consumer electronics products, and can efficiently control the current flowing into the load, ensuring stable operating performance and longer equipment life.
3. **Synchronous rectification**:
IPD50N06S3L-06-VB is used as a synchronous rectification MOSFET in AC-DC and DC-DC converters. Its low on-resistance characteristics significantly improve rectification efficiency and reduce power consumption. Especially in the rectifier modules of high-efficiency power supplies and power tools, it can effectively improve power conversion efficiency and reduce heat generation.
4. **Electric vehicles and power tools**:
For applications such as electric vehicles and power tools that require high power density and high reliability, this MOSFET provides good current handling capability and switching performance. It can effectively control high current loads, ensure stable operation of electric equipment and optimize power transmission.
The low on-resistance and high current handling capability of IPD50N06S3L-06-VB make it an ideal choice for a variety of applications that require efficient power management and load switching.
1. **DC-DC converter**:
IPD50N06S3L-06-VB is suitable for use in DC-DC converters, especially in applications that need to handle higher voltages (up to 60V) and larger currents (58A). Its low RDS(ON) characteristics help reduce power losses and improve overall system efficiency, making it particularly suitable for use in power management modules such as computer servers, network equipment, and high-efficiency power adapters.
2. **Load switch**:
The high current handling capability and low on-resistance of this MOSFET make it an excellent performer in load switch applications. It is suitable for use in a variety of industrial control systems and consumer electronics products, and can efficiently control the current flowing into the load, ensuring stable operating performance and longer equipment life.
3. **Synchronous rectification**:
IPD50N06S3L-06-VB is used as a synchronous rectification MOSFET in AC-DC and DC-DC converters. Its low on-resistance characteristics significantly improve rectification efficiency and reduce power consumption. Especially in the rectifier modules of high-efficiency power supplies and power tools, it can effectively improve power conversion efficiency and reduce heat generation.
4. **Electric vehicles and power tools**:
For applications such as electric vehicles and power tools that require high power density and high reliability, this MOSFET provides good current handling capability and switching performance. It can effectively control high current loads, ensure stable operation of electric equipment and optimize power transmission.
The low on-resistance and high current handling capability of IPD50N06S3L-06-VB make it an ideal choice for a variety of applications that require efficient power management and load switching.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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