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IPD50N06S3-15-VB Product details
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Product Introduction
IPD50N06S3-15-VB is a high-performance single N-channel MOSFET in TO252 package. It has a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V, suitable for high voltage and high current applications. Its threshold voltage (Vth) is 2.5V, and the on-resistance (RDS(ON)) is 13mΩ (VGS=4.5V) and 10mΩ (VGS=10V), respectively, and the maximum drain current (ID) reaches 58A. IPD50N06S3-15-VB uses advanced Trench technology, has excellent switching characteristics and low power consumption, and is suitable for various power management and switching applications.
IPD50N06S3-15-VB is a high-performance single N-channel MOSFET in TO252 package. It has a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V, suitable for high voltage and high current applications. Its threshold voltage (Vth) is 2.5V, and the on-resistance (RDS(ON)) is 13mΩ (VGS=4.5V) and 10mΩ (VGS=10V), respectively, and the maximum drain current (ID) reaches 58A. IPD50N06S3-15-VB uses advanced Trench technology, has excellent switching characteristics and low power consumption, and is suitable for various power management and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Parameter description
1. **Package type**: TO252
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 60V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 2.5V
6. **On-resistance (RDS(ON))**:
- 13mΩ @ VGS=4.5V
- 10mΩ @ VGS=10V
7. **Drain current (ID)**: 58A
8. **Technology**: Trench technology
9. **Gate charge (Qg)**: Low gate charge, which is beneficial to reduce switching losses
10. **Operating temperature range**: -55°C to 175°C
11. **Power consumption (Ptot)**: Suitable for high power applications with good heat dissipation performance
1. **Package type**: TO252
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 60V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 2.5V
6. **On-resistance (RDS(ON))**:
- 13mΩ @ VGS=4.5V
- 10mΩ @ VGS=10V
7. **Drain current (ID)**: 58A
8. **Technology**: Trench technology
9. **Gate charge (Qg)**: Low gate charge, which is beneficial to reduce switching losses
10. **Operating temperature range**: -55°C to 175°C
11. **Power consumption (Ptot)**: Suitable for high power applications with good heat dissipation performance
Domain and module applications：
Applicable fields and modules
1. **Automotive electronics**: IPD50N06S3-15-VB performs well in the power management systems of electric vehicles, such as battery management systems and motor drives. Its high current handling capability and low on-resistance enable it to reduce energy loss in the vehicle's power switching and high-efficiency power conversion, improving the vehicle's overall energy efficiency.
2. **Switching power supply**: In switching power supplies (SMPS) and buck converters, this MOSFET can effectively handle high-power loads and reduce switching losses. Its low RDS(ON) helps improve efficiency and stability in power management modules, and is particularly suitable for high-efficiency power supply applications.
3. **Industrial automation**: In industrial control and automation equipment, such as motor drives and relays, IPD50N06S3-15-VB is suitable for high-current switching and load driving. Its high withstand voltage and high current capability ensure reliable operation in harsh environments, improving the durability and stability of the equipment.
4. **Consumer Electronics**: In high-power consumer electronic devices, such as high-efficiency computer power supplies and home appliances, this MOSFET can be used for power switching and voltage regulation. Its high conductivity and low on-resistance make it superior in reducing power consumption and improving system performance.
1. **Automotive electronics**: IPD50N06S3-15-VB performs well in the power management systems of electric vehicles, such as battery management systems and motor drives. Its high current handling capability and low on-resistance enable it to reduce energy loss in the vehicle's power switching and high-efficiency power conversion, improving the vehicle's overall energy efficiency.
2. **Switching power supply**: In switching power supplies (SMPS) and buck converters, this MOSFET can effectively handle high-power loads and reduce switching losses. Its low RDS(ON) helps improve efficiency and stability in power management modules, and is particularly suitable for high-efficiency power supply applications.
3. **Industrial automation**: In industrial control and automation equipment, such as motor drives and relays, IPD50N06S3-15-VB is suitable for high-current switching and load driving. Its high withstand voltage and high current capability ensure reliable operation in harsh environments, improving the durability and stability of the equipment.
4. **Consumer Electronics**: In high-power consumer electronic devices, such as high-efficiency computer power supplies and home appliances, this MOSFET can be used for power switching and voltage regulation. Its high conductivity and low on-resistance make it superior in reducing power consumption and improving system performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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