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IPD50N06S3-09-VB Product details
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Product Introduction:
IPD50N06S3-09-VB is a single N-channel MOSFET with a TO252 package type. This MOSFET uses advanced Trench trench technology and has a drain-source voltage (VDS) of 60V and a high continuous drain current (ID) of 58A. Its low on-resistance (RDS(ON)) is 13mΩ @ VGS=4.5V and 10mΩ @ VGS=10V, respectively, which enables it to have excellent efficiency and performance in switching applications. Its gate threshold voltage (Vth) is 2.5V, which is suitable for a variety of application scenarios that require efficient switching and power management.
IPD50N06S3-09-VB is a single N-channel MOSFET with a TO252 package type. This MOSFET uses advanced Trench trench technology and has a drain-source voltage (VDS) of 60V and a high continuous drain current (ID) of 58A. Its low on-resistance (RDS(ON)) is 13mΩ @ VGS=4.5V and 10mΩ @ VGS=10V, respectively, which enables it to have excellent efficiency and performance in switching applications. Its gate threshold voltage (Vth) is 2.5V, which is suitable for a variety of application scenarios that require efficient switching and power management.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description:
- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**: 13mΩ @ VGS=4.5V, 10mΩ @ VGS=10V
- **Continuous drain current (ID)**: 58A
- **Technology**: Trench technology
- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**: 13mΩ @ VGS=4.5V, 10mΩ @ VGS=10V
- **Continuous drain current (ID)**: 58A
- **Technology**: Trench technology
Domain and module applications：
Application areas and module examples:
1. **DC-DC converter**: IPD50N06S3-09-VB is suitable for switching elements in DC-DC converters. Its high current carrying capacity and low on-resistance ensure high efficiency of the converter, which can effectively reduce power loss and is suitable for use in power management systems, such as computer power supplies, communication equipment power supplies, etc.
2. **Power management system**: In various power management applications, this MOSFET can provide stable switching performance and is suitable for equipment such as power management modules, smart battery chargers and UPS systems to ensure efficient energy transmission and system stability.
3. **Motor drive**: In motor drive applications, the high current capability of IPD50N06S3-09-VB makes it suitable for H-bridge circuits and motor drive modules, which can handle high current loads and improve the efficiency and performance of the drive system.
4. **LED drive circuit**: Due to its excellent conduction performance, IPD50N06S3-09-VB is also suitable for LED drive circuits, especially in high-voltage and high-power LED lighting systems, which can effectively reduce power loss and provide stable LED drive current.
1. **DC-DC converter**: IPD50N06S3-09-VB is suitable for switching elements in DC-DC converters. Its high current carrying capacity and low on-resistance ensure high efficiency of the converter, which can effectively reduce power loss and is suitable for use in power management systems, such as computer power supplies, communication equipment power supplies, etc.
2. **Power management system**: In various power management applications, this MOSFET can provide stable switching performance and is suitable for equipment such as power management modules, smart battery chargers and UPS systems to ensure efficient energy transmission and system stability.
3. **Motor drive**: In motor drive applications, the high current capability of IPD50N06S3-09-VB makes it suitable for H-bridge circuits and motor drive modules, which can handle high current loads and improve the efficiency and performance of the drive system.
4. **LED drive circuit**: Due to its excellent conduction performance, IPD50N06S3-09-VB is also suitable for LED drive circuits, especially in high-voltage and high-power LED lighting systems, which can effectively reduce power loss and provide stable LED drive current.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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