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IPD50N06S3-07-VB Product details
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IPD50N06S3-07-VB MOSFET Product Introduction
The IPD50N06S3-07-VB is a high-performance N-channel MOSFET designed in TO252 package, suitable for various power management and switching applications. It has a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V, which can provide strong switching capabilities. This MOSFET uses advanced Trench technology and has excellent low on-resistance, 13mΩ at VGS = 4.5V and 10mΩ at VGS = 10V, which makes it excellent in high current applications and can carry up to 58A of current. Its gate threshold voltage is 2.5V, which is suitable for low-voltage drive applications. The IPD50N06S3-07-VB is designed for efficient power conversion and management, and can provide low loss and fast switching characteristics.
The IPD50N06S3-07-VB is a high-performance N-channel MOSFET designed in TO252 package, suitable for various power management and switching applications. It has a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V, which can provide strong switching capabilities. This MOSFET uses advanced Trench technology and has excellent low on-resistance, 13mΩ at VGS = 4.5V and 10mΩ at VGS = 10V, which makes it excellent in high current applications and can carry up to 58A of current. Its gate threshold voltage is 2.5V, which is suitable for low-voltage drive applications. The IPD50N06S3-07-VB is designed for efficient power conversion and management, and can provide low loss and fast switching characteristics.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
IPD50N06S3-07-VB Detailed parameter description
1. **Package type**: TO252
2. **Polarity**: N-channel
3. **Drain-source voltage (VDS)**: 60V
4. **Gate-source voltage (VGS)**: ±20V
5. **Gate threshold voltage (Vth)**: 2.5V
6. **On-resistance (RDS(ON))**:
- 13mΩ @ VGS = 4.5V
- 10mΩ @ VGS = 10V
7. **Drain current (ID)**: 58A
8. **Technology type**: Trench
9. **Operating temperature range**: -55°C to 175°C
10. **Power dissipation (Ptot)**: typically 60W
11. **Maximum pulse current (ID, pulse)**: up to 200A
12. **Input capacitance (Ciss)**: about 1500pF
13. **Reverse recovery time (Trr)**: typically about 45ns
14. **Gate charge (Qg)**: typically 20nC
1. **Package type**: TO252
2. **Polarity**: N-channel
3. **Drain-source voltage (VDS)**: 60V
4. **Gate-source voltage (VGS)**: ±20V
5. **Gate threshold voltage (Vth)**: 2.5V
6. **On-resistance (RDS(ON))**:
- 13mΩ @ VGS = 4.5V
- 10mΩ @ VGS = 10V
7. **Drain current (ID)**: 58A
8. **Technology type**: Trench
9. **Operating temperature range**: -55°C to 175°C
10. **Power dissipation (Ptot)**: typically 60W
11. **Maximum pulse current (ID, pulse)**: up to 200A
12. **Input capacitance (Ciss)**: about 1500pF
13. **Reverse recovery time (Trr)**: typically about 45ns
14. **Gate charge (Qg)**: typically 20nC
Domain and module applications：
Applications and module examples
1. **Power supply systems**:
IPD50N06S3-07-VB provides efficient power conversion and management in power supply systems such as switch mode power supplies (SMPS) and uninterruptible power supplies (UPS). Its low on-resistance and high current carrying capacity can significantly reduce power loss and improve system efficiency.
2. **Automotive electronics**:
In automotive electronic systems, this MOSFET is suitable for applications such as power seat control, power window drive and car light control. Its high current handling capability and low on-resistance help improve system response speed and reliability.
3. **Consumer electronics**:
In consumer electronics, such as power management modules for laptops and mobile devices, IPD50N06S3-07-VB can effectively switch and convert power to ensure stable operation of the device and extend battery life.
4. **Industrial Motor Drive**:
Due to its high current handling capability and fast switching characteristics, this MOSFET is also very suitable for industrial motor drives and other applications that require efficient power conversion. Its excellent conduction performance and low power consumption make it an excellent performer in a variety of industrial equipment.
The IPD50N06S3-07-VB is a versatile, high-performance MOSFET suitable for a wide range of applications that require high current, high efficiency and low conduction losses.
1. **Power supply systems**:
IPD50N06S3-07-VB provides efficient power conversion and management in power supply systems such as switch mode power supplies (SMPS) and uninterruptible power supplies (UPS). Its low on-resistance and high current carrying capacity can significantly reduce power loss and improve system efficiency.
2. **Automotive electronics**:
In automotive electronic systems, this MOSFET is suitable for applications such as power seat control, power window drive and car light control. Its high current handling capability and low on-resistance help improve system response speed and reliability.
3. **Consumer electronics**:
In consumer electronics, such as power management modules for laptops and mobile devices, IPD50N06S3-07-VB can effectively switch and convert power to ensure stable operation of the device and extend battery life.
4. **Industrial Motor Drive**:
Due to its high current handling capability and fast switching characteristics, this MOSFET is also very suitable for industrial motor drives and other applications that require efficient power conversion. Its excellent conduction performance and low power consumption make it an excellent performer in a variety of industrial equipment.
The IPD50N06S3-07-VB is a versatile, high-performance MOSFET suitable for a wide range of applications that require high current, high efficiency and low conduction losses.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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