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IPD50N06S2L-13-VB Product details
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IPD50N06S2L-13-VB MOSFET Product Introduction
IPD50N06S2L-13-VB is a high-performance single N-channel MOSFET in TO252 package, designed for high-efficiency power management and switching applications. This MOSFET supports a drain-source voltage (VDS) of up to 60V and a gate-source voltage (VGS) of ±20V, and uses advanced trench technology (Trench Technology) to have excellent low on-resistance performance. Its low on-resistance enables it to perform well in high-current applications while ensuring low power consumption and high efficiency.
IPD50N06S2L-13-VB is a high-performance single N-channel MOSFET in TO252 package, designed for high-efficiency power management and switching applications. This MOSFET supports a drain-source voltage (VDS) of up to 60V and a gate-source voltage (VGS) of ±20V, and uses advanced trench technology (Trench Technology) to have excellent low on-resistance performance. Its low on-resistance enables it to perform well in high-current applications while ensuring low power consumption and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Polarity configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-on voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 13mΩ @ VGS=4.5V
- 10mΩ @ VGS=10V
- **Maximum drain current (ID)**: 58A
- **Technology**: Trench MOSFET (Trench Technology)
- **Package type**: TO252
- **Polarity configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-on voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 13mΩ @ VGS=4.5V
- 10mΩ @ VGS=10V
- **Maximum drain current (ID)**: 58A
- **Technology**: Trench MOSFET (Trench Technology)
Domain and module applications：
Application fields and module examples
1. **Power management system**: IPD50N06S2L-13-VB plays an important role in DC-DC converters and power switches. Its low on-resistance ensures high efficiency under high current loads, making it very suitable for computer power supplies, LED drive circuits, and power management modules in communication equipment.
2. **Electric vehicle drive**: In the drive system of electric vehicles, this MOSFET can effectively control the start, stop and speed regulation of the motor. Its high rated current capability of 58A enables it to withstand the high current in the electric vehicle drive circuit, improving the efficiency and reliability of the overall system.
3. **Automotive electronic system**: IPD50N06S2L-13-VB is suitable for automotive electronic modules, such as power windows, seat adjustment and lighting control applications. Its high performance and high stability ensure reliability in harsh working environments.
4. **Household appliances**: In household appliances, such as the switch control modules of washing machines and air conditioners, this MOSFET can provide stable switching performance and low power operation, ensuring long-term reliable operation of household appliances.
The high rated current and low on-resistance characteristics of IPD50N06S2L-13-VB make it excellent in various applications requiring high performance and low power consumption. It can be widely used in high current power management, automotive electronics and household appliances.
1. **Power management system**: IPD50N06S2L-13-VB plays an important role in DC-DC converters and power switches. Its low on-resistance ensures high efficiency under high current loads, making it very suitable for computer power supplies, LED drive circuits, and power management modules in communication equipment.
2. **Electric vehicle drive**: In the drive system of electric vehicles, this MOSFET can effectively control the start, stop and speed regulation of the motor. Its high rated current capability of 58A enables it to withstand the high current in the electric vehicle drive circuit, improving the efficiency and reliability of the overall system.
3. **Automotive electronic system**: IPD50N06S2L-13-VB is suitable for automotive electronic modules, such as power windows, seat adjustment and lighting control applications. Its high performance and high stability ensure reliability in harsh working environments.
4. **Household appliances**: In household appliances, such as the switch control modules of washing machines and air conditioners, this MOSFET can provide stable switching performance and low power operation, ensuring long-term reliable operation of household appliances.
The high rated current and low on-resistance characteristics of IPD50N06S2L-13-VB make it excellent in various applications requiring high performance and low power consumption. It can be widely used in high current power management, automotive electronics and household appliances.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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