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IPD50N04S4L-08-VB Product details
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1. IPD50N04S4L-08-VB Product Introduction
IPD50N04S4L-08-VB is a high-performance single N-channel MOSFET in TO252 package. This MOSFET is designed for efficient power management and switching applications, with excellent conduction performance and low on-resistance. Its maximum drain-source voltage is 40V, the gate-source voltage is ±20V, the on-resistance is as low as 5mΩ (at VGS=10V), and it can carry a drain current of up to 85A. This MOSFET uses Trench technology, which provides excellent switching speed and efficient power transmission, and is suitable for applications requiring high performance and low power consumption.
IPD50N04S4L-08-VB is a high-performance single N-channel MOSFET in TO252 package. This MOSFET is designed for efficient power management and switching applications, with excellent conduction performance and low on-resistance. Its maximum drain-source voltage is 40V, the gate-source voltage is ±20V, the on-resistance is as low as 5mΩ (at VGS=10V), and it can carry a drain current of up to 85A. This MOSFET uses Trench technology, which provides excellent switching speed and efficient power transmission, and is suitable for applications requiring high performance and low power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. IPD50N04S4L-08-VB Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ@VGS=4.5V
- 5mΩ@VGS=10V
- **Drain current (ID)**: 85A
- **Technology**: Trench (trench technology)
- **Other features**: Low on-resistance, fast switching capability, low gate charge, suitable for high frequency and high power applications.
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ@VGS=4.5V
- 5mΩ@VGS=10V
- **Drain current (ID)**: 85A
- **Technology**: Trench (trench technology)
- **Other features**: Low on-resistance, fast switching capability, low gate charge, suitable for high frequency and high power applications.
Domain and module applications：
3. Application fields and module examples of IPD50N04S4L-08-VB
1. **Power management and converters**: This MOSFET is very suitable for DC-DC converters and power management systems due to its extremely low on-resistance and high current capability. These characteristics can significantly improve the efficiency of the power supply and reduce energy loss, making it suitable for power modules of various electronic devices.
2. **Electric vehicle drive system**: In the motor control and drive system of electric vehicles, the high current carrying capacity and fast switching performance of IPD50N04S4L-08-VB make it an ideal choice. It can effectively handle high-power loads in motor drives and improve the overall efficiency of the system.
3. **High-power LED drive**: Due to its low on-resistance and excellent switching characteristics, this MOSFET is suitable for switching and dimming control in high-power LED lighting systems. It can effectively control the power and brightness of LEDs while maintaining low power consumption.
4. **Industrial Automation Equipment**: In industrial automation equipment, the IPD50N04S4L-08-VB can be used for power switching and load control. Its high voltage and current capabilities enable it to handle high-power loads in various industrial applications, ensuring efficient and stable operation of the equipment.
These applications take advantage of the IPD50N04S4L-08-VB's efficient power conversion and switching capabilities, making it excel in a variety of applications requiring high power and high efficiency.
1. **Power management and converters**: This MOSFET is very suitable for DC-DC converters and power management systems due to its extremely low on-resistance and high current capability. These characteristics can significantly improve the efficiency of the power supply and reduce energy loss, making it suitable for power modules of various electronic devices.
2. **Electric vehicle drive system**: In the motor control and drive system of electric vehicles, the high current carrying capacity and fast switching performance of IPD50N04S4L-08-VB make it an ideal choice. It can effectively handle high-power loads in motor drives and improve the overall efficiency of the system.
3. **High-power LED drive**: Due to its low on-resistance and excellent switching characteristics, this MOSFET is suitable for switching and dimming control in high-power LED lighting systems. It can effectively control the power and brightness of LEDs while maintaining low power consumption.
4. **Industrial Automation Equipment**: In industrial automation equipment, the IPD50N04S4L-08-VB can be used for power switching and load control. Its high voltage and current capabilities enable it to handle high-power loads in various industrial applications, ensuring efficient and stable operation of the equipment.
These applications take advantage of the IPD50N04S4L-08-VB's efficient power conversion and switching capabilities, making it excel in a variety of applications requiring high power and high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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