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IPD50N04S4-10-VB Product details
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1. IPD50N04S4-10-VB Product Introduction
IPD50N04S4-10-VB is a high-performance unipolar N-channel MOSFET in TO252 package with excellent current handling capability and low on-resistance. Its 40V drain-source breakdown voltage and 85A drain current carrying capacity make it very suitable for applications requiring high efficiency and high current handling. Using advanced Trench technology, IPD50N04S4-10-VB has excellent switching performance and low conduction loss, and can work stably in high frequency and high load environments.
IPD50N04S4-10-VB is a high-performance unipolar N-channel MOSFET in TO252 package with excellent current handling capability and low on-resistance. Its 40V drain-source breakdown voltage and 85A drain current carrying capacity make it very suitable for applications requiring high efficiency and high current handling. Using advanced Trench technology, IPD50N04S4-10-VB has excellent switching performance and low conduction loss, and can work stably in high frequency and high load environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. IPD50N04S4-10-VB Detailed parameter description
- **Package type**: TO252
- **Channel configuration**: Unipolar N-channel
- **Drain-source breakdown voltage (VDS)**: 40V
- **Gate drive voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 85A
- **Technology**: Trench (trench technology)
- **Package type**: TO252
- **Channel configuration**: Unipolar N-channel
- **Drain-source breakdown voltage (VDS)**: 40V
- **Gate drive voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 85A
- **Technology**: Trench (trench technology)
Domain and module applications：
3. Application fields and module examples
1. **High-efficiency power management**:
The low on-resistance and high current capability of IPD50N04S4-10-VB make it suitable for high-efficiency power management applications such as DC-DC converters and power modules. Its excellent switching performance can effectively reduce power consumption and improve the overall efficiency of the power system, especially in power supply designs that require high efficiency and high-frequency switching.
2. **Electric vehicles and motor drives**:
Due to its high current handling capability and low on-resistance, IPD50N04S4-10-VB is very suitable for electric vehicles and motor drive applications. It can provide stable current control and efficient switching performance, helping to achieve high-efficiency and long-life electric drive systems in electric vehicle motor drivers.
3. **Load switch and battery management system**:
In load switch and battery management system, the high current carrying capacity and low on-resistance of IPD50N04S4-10-VB enable it to stably handle high current loads, suitable for functions such as battery protection, load switch and overcurrent protection, ensuring the safety and stability of the system.
4. **Power converter**:
This MOSFET is also suitable for various power converters such as adapters and inverters. Its lower on-resistance and high switching speed help improve the efficiency of power converters, especially in power conversion scenarios that require fast response and high efficiency, which can significantly reduce power consumption and heat generation.
1. **High-efficiency power management**:
The low on-resistance and high current capability of IPD50N04S4-10-VB make it suitable for high-efficiency power management applications such as DC-DC converters and power modules. Its excellent switching performance can effectively reduce power consumption and improve the overall efficiency of the power system, especially in power supply designs that require high efficiency and high-frequency switching.
2. **Electric vehicles and motor drives**:
Due to its high current handling capability and low on-resistance, IPD50N04S4-10-VB is very suitable for electric vehicles and motor drive applications. It can provide stable current control and efficient switching performance, helping to achieve high-efficiency and long-life electric drive systems in electric vehicle motor drivers.
3. **Load switch and battery management system**:
In load switch and battery management system, the high current carrying capacity and low on-resistance of IPD50N04S4-10-VB enable it to stably handle high current loads, suitable for functions such as battery protection, load switch and overcurrent protection, ensuring the safety and stability of the system.
4. **Power converter**:
This MOSFET is also suitable for various power converters such as adapters and inverters. Its lower on-resistance and high switching speed help improve the efficiency of power converters, especially in power conversion scenarios that require fast response and high efficiency, which can significantly reduce power consumption and heat generation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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