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IPD50N04S3L-08-VB Product details
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Product Introduction - IPD50N04S3L-08-VB
IPD50N04S3L-08-VB is a high-performance single N-channel power MOSFET in TO252 package, designed for applications requiring high switching speed and low conduction loss. This MOSFET has low on-resistance and high drain current capability, suitable for use in high-efficiency power management and high-power switching applications. It is manufactured based on Trench technology, can work stably in high voltage environment, and ensure high efficiency and long life.
IPD50N04S3L-08-VB is a high-performance single N-channel power MOSFET in TO252 package, designed for applications requiring high switching speed and low conduction loss. This MOSFET has low on-resistance and high drain current capability, suitable for use in high-efficiency power management and high-power switching applications. It is manufactured based on Trench technology, can work stably in high voltage environment, and ensure high efficiency and long life.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Drain current (ID)**: 85A
- **Technology type**: Trench technology
- **Thermal resistance**: Low thermal resistance characteristics, suitable for high power density applications
- **Package type**: TO252
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Drain current (ID)**: 85A
- **Technology type**: Trench technology
- **Thermal resistance**: Low thermal resistance characteristics, suitable for high power density applications
Domain and module applications：
Applications and module examples
1. **Power management system**
The low on-resistance and high drain current of IPD50N04S3L-08-VB enable it to perform well in high-efficiency power management systems, effectively reducing power loss and improving overall system performance. It is suitable for computer power supplies, server power supplies and other high-efficiency power solutions.
2. **DC-DC converter**
The low RDS(ON) characteristics of this MOSFET enable it to provide excellent switching performance in DC-DC converters, reduce energy loss, and improve conversion efficiency. It is suitable for use in communication equipment, consumer electronics and power modules.
3. **Motor driver**
In motor drive applications, IPD50N04S3L-08-VB can handle higher current loads and provide reliable switching and control functions. It is particularly suitable for motor drive modules in electric vehicles, power tools and industrial automation.
4. **LED Driver**
Due to its high switching speed and low on-resistance, this MOSFET is suitable for use in LED drivers to ensure high efficiency and stable light output. It is widely used in LED lighting systems and display driver modules.
5. **Battery Protection Circuit**
IPD50N04S3L-08-VB can provide high current switching function in the battery protection circuit to protect the battery from overcharge, over discharge and short circuit. It is suitable for battery management systems and battery protection solutions for electric vehicles.
1. **Power management system**
The low on-resistance and high drain current of IPD50N04S3L-08-VB enable it to perform well in high-efficiency power management systems, effectively reducing power loss and improving overall system performance. It is suitable for computer power supplies, server power supplies and other high-efficiency power solutions.
2. **DC-DC converter**
The low RDS(ON) characteristics of this MOSFET enable it to provide excellent switching performance in DC-DC converters, reduce energy loss, and improve conversion efficiency. It is suitable for use in communication equipment, consumer electronics and power modules.
3. **Motor driver**
In motor drive applications, IPD50N04S3L-08-VB can handle higher current loads and provide reliable switching and control functions. It is particularly suitable for motor drive modules in electric vehicles, power tools and industrial automation.
4. **LED Driver**
Due to its high switching speed and low on-resistance, this MOSFET is suitable for use in LED drivers to ensure high efficiency and stable light output. It is widely used in LED lighting systems and display driver modules.
5. **Battery Protection Circuit**
IPD50N04S3L-08-VB can provide high current switching function in the battery protection circuit to protect the battery from overcharge, over discharge and short circuit. It is suitable for battery management systems and battery protection solutions for electric vehicles.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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