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IPD50N04S3-09-VB Product details
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Product Introduction:
IPD50N04S3-09-VB is a high-performance single N-channel MOSFET in TO252 package, suitable for applications requiring high current and low on-resistance. Its maximum drain-source voltage is 40V, the gate-source voltage range is ±20V, and it has a low turn-on threshold voltage of 2.5V, ensuring that it can be turned on at a lower gate voltage. The MOSFET uses Trench technology, which provides extremely low on-resistance (RDS(ON)) and enables efficient power switching under high current conditions. This makes the IPD50N04S3-09-VB very suitable for high-efficiency and high-power density applications.
IPD50N04S3-09-VB is a high-performance single N-channel MOSFET in TO252 package, suitable for applications requiring high current and low on-resistance. Its maximum drain-source voltage is 40V, the gate-source voltage range is ±20V, and it has a low turn-on threshold voltage of 2.5V, ensuring that it can be turned on at a lower gate voltage. The MOSFET uses Trench technology, which provides extremely low on-resistance (RDS(ON)) and enables efficient power switching under high current conditions. This makes the IPD50N04S3-09-VB very suitable for high-efficiency and high-power density applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Parameter description:
- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Drain current (ID)**: 85A
- **Technology type**: Trench
- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Drain current (ID)**: 85A
- **Technology type**: Trench
Domain and module applications：
Applications and modules:
1. **Power management**: The low on-resistance and high current carrying capacity of IPD50N04S3-09-VB make it ideal for high-efficiency power management systems such as switching power supplies and DC-DC converters. These systems require MOSFETs with efficient switching performance and low power losses to improve overall power efficiency.
2. **Electric Vehicles (EV)**: In the power systems of electric vehicles, such as battery management systems (BMS) and electric motor drives, IPD50N04S3-09-VB is able to handle high current and high power, ensuring stable and efficient power transmission during driving.
3. **Industrial control systems**: This MOSFET is suitable for motor drive and load switching applications in industrial equipment. Its high current handling capability and low on-resistance can provide reliable control and efficient energy conversion under high power loads.
4. **Communication equipment**: In the power modules of communication equipment, IPD50N04S3-09-VB can handle high current and high power requirements, such as base station power supplies and other high-power communication modules, to ensure stable operation and power efficiency of the equipment.
5. **Solar inverter**: Due to its excellent switching performance and low on-resistance, this MOSFET can be used in solar inverters to achieve efficient conversion of DC to AC, improving the energy efficiency and stability of the overall system.
1. **Power management**: The low on-resistance and high current carrying capacity of IPD50N04S3-09-VB make it ideal for high-efficiency power management systems such as switching power supplies and DC-DC converters. These systems require MOSFETs with efficient switching performance and low power losses to improve overall power efficiency.
2. **Electric Vehicles (EV)**: In the power systems of electric vehicles, such as battery management systems (BMS) and electric motor drives, IPD50N04S3-09-VB is able to handle high current and high power, ensuring stable and efficient power transmission during driving.
3. **Industrial control systems**: This MOSFET is suitable for motor drive and load switching applications in industrial equipment. Its high current handling capability and low on-resistance can provide reliable control and efficient energy conversion under high power loads.
4. **Communication equipment**: In the power modules of communication equipment, IPD50N04S3-09-VB can handle high current and high power requirements, such as base station power supplies and other high-power communication modules, to ensure stable operation and power efficiency of the equipment.
5. **Solar inverter**: Due to its excellent switching performance and low on-resistance, this MOSFET can be used in solar inverters to achieve efficient conversion of DC to AC, improving the energy efficiency and stability of the overall system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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