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IPD50N04S3-08-VB Product details
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1. IPD50N04S3-08-VB Product Introduction
IPD50N04S3-08-VB is a high-performance N-channel power MOSFET in TO252 package. With a drain-source voltage (VDS) of 40V and a drain current (ID) handling capability of up to 85A, this MOSFET is suitable for circuit designs requiring high power and low on-resistance. It uses advanced trench technology, which enables it to achieve low on-resistance at lower gate drive voltages. Its on-resistance (RDS(ON)) is 6mΩ (VGS=4.5V) and 5mΩ (VGS=10V), which makes it perform well in high-current applications and can significantly reduce power consumption and heat generation, thereby improving system efficiency and stability. The gate threshold voltage (Vth) is 2.5V, ensuring that it can achieve fast and reliable switching operation at standard drive voltages.
IPD50N04S3-08-VB is a high-performance N-channel power MOSFET in TO252 package. With a drain-source voltage (VDS) of 40V and a drain current (ID) handling capability of up to 85A, this MOSFET is suitable for circuit designs requiring high power and low on-resistance. It uses advanced trench technology, which enables it to achieve low on-resistance at lower gate drive voltages. Its on-resistance (RDS(ON)) is 6mΩ (VGS=4.5V) and 5mΩ (VGS=10V), which makes it perform well in high-current applications and can significantly reduce power consumption and heat generation, thereby improving system efficiency and stability. The gate threshold voltage (Vth) is 2.5V, ensuring that it can achieve fast and reliable switching operation at standard drive voltages.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. IPD50N04S3-08-VB Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single channel N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**: 6mΩ @ VGS=4.5V
- **On-resistance (RDS(ON))**: 5mΩ @ VGS=10V
- **Drain current (ID)**: 85A
- **Technology**: Trench technology
- **Thermal resistance (Rth)**: Depends on the specific heat dissipation conditions and application environment, usually designed for effective heat dissipation requirements in high power applications
- **Package type**: TO252
- **Configuration**: Single channel N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**: 6mΩ @ VGS=4.5V
- **On-resistance (RDS(ON))**: 5mΩ @ VGS=10V
- **Drain current (ID)**: 85A
- **Technology**: Trench technology
- **Thermal resistance (Rth)**: Depends on the specific heat dissipation conditions and application environment, usually designed for effective heat dissipation requirements in high power applications
Domain and module applications：
III. Application fields and module examples
1. **High-efficiency power converters and switching power supplies**
The low on-resistance and high current carrying capacity of IPD50N04S3-08-VB make it very suitable for use in high-efficiency power converters and switching power supplies (SMPS). It can effectively reduce power loss and improve conversion efficiency, and is suitable for use in industrial power modules and high-performance consumer electronics.
2. **Electric vehicle battery management system**
In the battery management system (BMS) of electric vehicles, this MOSFET can provide stable power switching and protection functions. Its high current capability and low on-resistance ensure the safety and effective management of the battery, improving the overall performance and life of the system.
3. **Motor drive and control**
IPD50N04S3-08-VB can provide precise control and efficient power transfer in motor drive circuits. Due to its high current handling capability and low on-resistance, it is suitable for motor drive systems, which can effectively improve the efficiency and reliability of the motor.
4. **Smart Home and Automation System**
In smart home and automation systems, this MOSFET can be used in various switch control modules, such as lighting control, electric curtain drive, etc. Its low on-resistance and high current capability ensure that the system responds quickly and reliably, and is suitable for application scenarios with high switching performance requirements.
1. **High-efficiency power converters and switching power supplies**
The low on-resistance and high current carrying capacity of IPD50N04S3-08-VB make it very suitable for use in high-efficiency power converters and switching power supplies (SMPS). It can effectively reduce power loss and improve conversion efficiency, and is suitable for use in industrial power modules and high-performance consumer electronics.
2. **Electric vehicle battery management system**
In the battery management system (BMS) of electric vehicles, this MOSFET can provide stable power switching and protection functions. Its high current capability and low on-resistance ensure the safety and effective management of the battery, improving the overall performance and life of the system.
3. **Motor drive and control**
IPD50N04S3-08-VB can provide precise control and efficient power transfer in motor drive circuits. Due to its high current handling capability and low on-resistance, it is suitable for motor drive systems, which can effectively improve the efficiency and reliability of the motor.
4. **Smart Home and Automation System**
In smart home and automation systems, this MOSFET can be used in various switch control modules, such as lighting control, electric curtain drive, etc. Its low on-resistance and high current capability ensure that the system responds quickly and reliably, and is suitable for application scenarios with high switching performance requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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