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IPD50N03S2L-06-VB Product details
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1. IPD50N03S2L-06-VB Product Introduction:
IPD50N03S2L-06-VB is a single N-channel power MOSFET in TO252 package, with a maximum drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) tolerance of ±20V, suitable for low-voltage and high-efficiency power management applications. The device has an on-resistance (RDS(ON)) of 6mΩ (@VGS=4.5V) and 5mΩ (@VGS=10V), respectively. It can maintain low conduction loss at a drain current of 80A and has advanced Trench technology. The turn-on threshold voltage of this MOSFET is 1.7V, which provides excellent switching performance and low loss, and is suitable for applications with high efficiency and high current requirements.
IPD50N03S2L-06-VB is a single N-channel power MOSFET in TO252 package, with a maximum drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) tolerance of ±20V, suitable for low-voltage and high-efficiency power management applications. The device has an on-resistance (RDS(ON)) of 6mΩ (@VGS=4.5V) and 5mΩ (@VGS=10V), respectively. It can maintain low conduction loss at a drain current of 80A and has advanced Trench technology. The turn-on threshold voltage of this MOSFET is 1.7V, which provides excellent switching performance and low loss, and is suitable for applications with high efficiency and high current requirements.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. IPD50N03S2L-06-VB Detailed parameter description:
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 80A
- **Technology type**: Trench technology
- **Maximum power consumption**: Depends on specific application and heat dissipation design
- **Operating temperature range**: -55°C to 175°C
- **Typical applications**: DC-DC converters, power management, load switches, synchronous rectification, etc.
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 80A
- **Technology type**: Trench technology
- **Maximum power consumption**: Depends on specific application and heat dissipation design
- **Operating temperature range**: -55°C to 175°C
- **Typical applications**: DC-DC converters, power management, load switches, synchronous rectification, etc.
Domain and module applications：
3. Application fields and module examples:
1. **Power management module**:
IPD50N03S2L-06-VB is very suitable for DC-DC converters, especially in low voltage and high current power applications. Its low RDS(ON) characteristics are very effective in reducing conduction losses and improving system efficiency, especially in power modules for servers, communication equipment and consumer electronics.
2. **Power tool and electric vehicle control system**:
Since IPD50N03S2L-06-VB can handle currents up to 80A, it is also widely used in power tools and electric vehicle controllers. Its high current capability and low loss characteristics make it suitable for motor drives and energy recovery modules, helping to extend the battery life of the device.
3. **Synchronous rectification module**:
In AC-DC or DC-DC power supply designs, IPD50N03S2L-06-VB is often used as a synchronous rectification MOSFET. Its fast switching performance and low conduction loss greatly improve the rectification efficiency and reduce the heat generation, especially in high-efficiency power supply and server power supply systems.
4. **Consumer Electronic Devices**:
For power management circuits in consumer electronic products such as laptops and smartphones, this MOSFET can significantly reduce power loss and improve battery life, becoming a key component to improve the overall energy efficiency of the system.
IPD50N03S2L-06-VB, due to its excellent switching characteristics and low on-resistance, can provide strong support for various high-efficiency, high-power density systems.
1. **Power management module**:
IPD50N03S2L-06-VB is very suitable for DC-DC converters, especially in low voltage and high current power applications. Its low RDS(ON) characteristics are very effective in reducing conduction losses and improving system efficiency, especially in power modules for servers, communication equipment and consumer electronics.
2. **Power tool and electric vehicle control system**:
Since IPD50N03S2L-06-VB can handle currents up to 80A, it is also widely used in power tools and electric vehicle controllers. Its high current capability and low loss characteristics make it suitable for motor drives and energy recovery modules, helping to extend the battery life of the device.
3. **Synchronous rectification module**:
In AC-DC or DC-DC power supply designs, IPD50N03S2L-06-VB is often used as a synchronous rectification MOSFET. Its fast switching performance and low conduction loss greatly improve the rectification efficiency and reduce the heat generation, especially in high-efficiency power supply and server power supply systems.
4. **Consumer Electronic Devices**:
For power management circuits in consumer electronic products such as laptops and smartphones, this MOSFET can significantly reduce power loss and improve battery life, becoming a key component to improve the overall energy efficiency of the system.
IPD50N03S2L-06-VB, due to its excellent switching characteristics and low on-resistance, can provide strong support for various high-efficiency, high-power density systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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