IPD50CN10N G-VB Product details
Product introduction:
IPD50CN10N G-VB is a single N-channel MOSFET in TO252 package. It has a drain-source voltage (VDS) of 100V, a gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 1.8V, and can support a current load of up to 40A. This MOSFET uses advanced Trench technology and has a low on-resistance (RDS(ON)) of 35mΩ@VGS=4.5V and 30mΩ@VGS=10V respectively. The device is suitable for high-efficiency power conversion and switching applications, especially in power loss sensitive circuits.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | 30mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
1. **Package Type**: TO252
2. **Configuration**: Single N-channel
3. **Drain-Source Voltage (VDS)**: 100V
4. **Gate-Source Voltage (VGS)**: ±20V
5. **Threshold Voltage (Vth)**: 1.8V
6. **On-Resistance (RDS(ON))**:
- 35mΩ @ VGS=4.5V
- 30mΩ @ VGS=10V
7. **Drain Current (ID)**: 40A
8. **Technology**: Trench Technology
9. **Gate Charge (Qg)**: Low gate charge for improved switching efficiency
10. **Operating Temperature Range**: -55°C to 175°C
11. **Power consumption (Ptot)**: High power consumption capability, suitable for high load environments
Domain and module applications:
1. **Automotive electronics**: The IPD50CN10N G-VB can be used in inverters, DC-DC converters, and on-board power management systems in electric vehicles. In these modules, the high current handling capability and low on-resistance of the MOSFET can reduce power losses, thereby improving the overall energy efficiency of the vehicle.
2. **Power management**: The device is ideal for use in power management modules such as switching power supplies (SMPS) and buck converters. Its high withstand voltage and high current capabilities make it excel in the field of power regulators and power switches for efficient power conversion.
3. **Industrial control systems**: The ruggedness and high temperature operating characteristics of the IPD50CN10N G-VB make it ideal for use in motor drives, relays, and industrial power control systems in factory automation, where it can operate reliably in harsh environments.
4. **Consumer Electronics**: In high-power consumer electronic devices such as smart TVs, home appliances, and computer power supplies, the device can be used for load switching and voltage regulation circuits, providing efficient power management and thermal efficiency.
Through its application in different fields, the MOSFET has demonstrated its high efficiency, low loss, and reliability, and is widely used in power conversion and control modules.
Technical support:
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