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IPD49CN10N G-VB Product details
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Product Introduction:
IPD49CN10N G-VB is a single N-channel MOSFET in TO252 package with excellent switching performance and low on-resistance. With a drain-source voltage (VDS) of 100V and a continuous drain current (ID) of up to 40A, the device is very suitable for high-efficiency power management applications. Its low gate threshold voltage (Vth = 1.8V) enables efficient switching at lower gate drive voltages, and combined with advanced trench technology, it further reduces on-resistance, thereby improving efficiency and reducing energy loss.
IPD49CN10N G-VB is a single N-channel MOSFET in TO252 package with excellent switching performance and low on-resistance. With a drain-source voltage (VDS) of 100V and a continuous drain current (ID) of up to 40A, the device is very suitable for high-efficiency power management applications. Its low gate threshold voltage (Vth = 1.8V) enables efficient switching at lower gate drive voltages, and combined with advanced trench technology, it further reduces on-resistance, thereby improving efficiency and reducing energy loss.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | 30mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description:
- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 35mΩ @ VGS=4.5V, 30mΩ @ VGS=10V
- **Continuous drain current (ID)**: 40A
- **Technology**: Trench technology
- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 35mΩ @ VGS=4.5V, 30mΩ @ VGS=10V
- **Continuous drain current (ID)**: 40A
- **Technology**: Trench technology
Domain and module applications：
Application fields and module examples:
1. **Motor drive module**: Due to its high current carrying capacity and low on-resistance, this MOSFET is very suitable for use in H-bridge circuits and inverters in motor drive modules, and can effectively reduce power losses in motor drives.
2. **DC-DC converter**: In power management systems, such as DC-DC buck or boost converters, the IPD49CN10N G-VB can provide more efficient conversion efficiency through its 100V withstand voltage and low RDS(ON) characteristics, especially for industrial power equipment or automotive power management systems.
3. **LED drive circuit**: Due to its good switching performance, the IPD49CN10N G-VB is also very suitable for use in LED drive circuits, especially under high voltage conditions, it can stably drive high-power LED lamps while effectively reducing switching losses.
4. **Battery Management System (BMS)**: The high current and high voltage characteristics of this MOSFET make it suitable for lithium battery management systems, which can handle the charging, discharging and current detection functions of the battery pack, helping to extend battery life and ensure system safety.
1. **Motor drive module**: Due to its high current carrying capacity and low on-resistance, this MOSFET is very suitable for use in H-bridge circuits and inverters in motor drive modules, and can effectively reduce power losses in motor drives.
2. **DC-DC converter**: In power management systems, such as DC-DC buck or boost converters, the IPD49CN10N G-VB can provide more efficient conversion efficiency through its 100V withstand voltage and low RDS(ON) characteristics, especially for industrial power equipment or automotive power management systems.
3. **LED drive circuit**: Due to its good switching performance, the IPD49CN10N G-VB is also very suitable for use in LED drive circuits, especially under high voltage conditions, it can stably drive high-power LED lamps while effectively reducing switching losses.
4. **Battery Management System (BMS)**: The high current and high voltage characteristics of this MOSFET make it suitable for lithium battery management systems, which can handle the charging, discharging and current detection functions of the battery pack, helping to extend battery life and ensure system safety.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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