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IPD400N06N G-VB Product details
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IPD400N06N G-VB MOSFET Product Introduction
The IPD400N06N G-VB is an N-channel MOSFET in a TO252 package, designed for high-efficiency power management applications. It has a drain-source voltage (VDS) of 60V, a gate-source voltage (VGS) of ±20V, and uses advanced Trench technology to reduce on-resistance and improve switching efficiency. The device has an on-resistance (RDS(ON)) of 30mΩ at VGS = 4.5V and 25mΩ at VGS = 10V, and can carry up to 45A of current. Its gate threshold voltage is 1.7V, which is suitable for low-voltage drive applications. The IPD400N06N G-VB provides efficient conduction performance and fast switching characteristics, making it ideal for a variety of power conversion and management scenarios.
The IPD400N06N G-VB is an N-channel MOSFET in a TO252 package, designed for high-efficiency power management applications. It has a drain-source voltage (VDS) of 60V, a gate-source voltage (VGS) of ±20V, and uses advanced Trench technology to reduce on-resistance and improve switching efficiency. The device has an on-resistance (RDS(ON)) of 30mΩ at VGS = 4.5V and 25mΩ at VGS = 10V, and can carry up to 45A of current. Its gate threshold voltage is 1.7V, which is suitable for low-voltage drive applications. The IPD400N06N G-VB provides efficient conduction performance and fast switching characteristics, making it ideal for a variety of power conversion and management scenarios.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 45A | 25mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
IPD400N06N G-VB Detailed parameter description
1. **Package type**: TO252
2. **Polarity**: N-channel
3. **Drain-source voltage (VDS)**: 60V
4. **Gate-source voltage (VGS)**: ±20V
5. **Gate threshold voltage (Vth)**: 1.7V
6. **On-resistance (RDS(ON))**:
- 30mΩ @ VGS = 4.5V
- 25mΩ @ VGS = 10V
7. **Drain current (ID)**: 45A
8. **Technology type**: Trench
9. **Operating temperature range**: -55°C to 175°C
10. **Power dissipation (Ptot)**: typically 50W
11. **Maximum pulse current (ID, pulse)**: up to 180A
12. **Input capacitance (Ciss)**: about 1200pF
13. **Reverse recovery time (Trr)**: typically about 40ns
14. **Gate charge (Qg)**: typically 15nC
1. **Package type**: TO252
2. **Polarity**: N-channel
3. **Drain-source voltage (VDS)**: 60V
4. **Gate-source voltage (VGS)**: ±20V
5. **Gate threshold voltage (Vth)**: 1.7V
6. **On-resistance (RDS(ON))**:
- 30mΩ @ VGS = 4.5V
- 25mΩ @ VGS = 10V
7. **Drain current (ID)**: 45A
8. **Technology type**: Trench
9. **Operating temperature range**: -55°C to 175°C
10. **Power dissipation (Ptot)**: typically 50W
11. **Maximum pulse current (ID, pulse)**: up to 180A
12. **Input capacitance (Ciss)**: about 1200pF
13. **Reverse recovery time (Trr)**: typically about 40ns
14. **Gate charge (Qg)**: typically 15nC
Domain and module applications：
Applications and module examples
1. **Automotive electronics**:
IPD400N06N G-VB is commonly used in automotive electronic control systems such as electric steering, headlight drive and electric seat adjustment. Its low on-resistance and high current carrying capacity make it very suitable for efficient power transmission and conversion systems.
2. **DC-DC converter**:
In DC-DC converters, the trench technology of this MOSFET can improve switching speed and energy efficiency, reducing power loss. Therefore, IPD400N06N G-VB is widely used in computer power supplies, voltage regulator modules in consumer electronic devices and industrial DC-DC conversion circuits.
3. **Power tools**:
Due to its excellent current handling capability and high efficiency, this MOSFET can be used to drive the motor control circuit of high-power power tools, thereby reducing heat loss and improving the overall reliability of the system.
4. **Switching Power Supply (SMPS)**:
IPD400N06N G-VB is suitable for use in switching power supplies, especially in medium power level AC-DC and DC-DC conversion, which can effectively reduce conduction losses and improve conversion efficiency.
This MOSFET is suitable for any application scenario that requires efficient power transmission, low loss and fast switching.
1. **Automotive electronics**:
IPD400N06N G-VB is commonly used in automotive electronic control systems such as electric steering, headlight drive and electric seat adjustment. Its low on-resistance and high current carrying capacity make it very suitable for efficient power transmission and conversion systems.
2. **DC-DC converter**:
In DC-DC converters, the trench technology of this MOSFET can improve switching speed and energy efficiency, reducing power loss. Therefore, IPD400N06N G-VB is widely used in computer power supplies, voltage regulator modules in consumer electronic devices and industrial DC-DC conversion circuits.
3. **Power tools**:
Due to its excellent current handling capability and high efficiency, this MOSFET can be used to drive the motor control circuit of high-power power tools, thereby reducing heat loss and improving the overall reliability of the system.
4. **Switching Power Supply (SMPS)**:
IPD400N06N G-VB is suitable for use in switching power supplies, especially in medium power level AC-DC and DC-DC conversion, which can effectively reduce conduction losses and improve conversion efficiency.
This MOSFET is suitable for any application scenario that requires efficient power transmission, low loss and fast switching.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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