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IPD35CN10N G-VB Product details
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IPD35CN10N G-VB MOSFET Product Introduction
IPD35CN10N G-VB is a single N-channel power MOSFET in TO252 package with 100V drain-source voltage (VDS) and ±20V gate-source voltage (VGS), suitable for medium and high voltage power conversion and switching applications. Based on advanced trench technology (Trench Technology), the device has low on-resistance (RDS(ON)), can provide stable performance and low loss performance in high-efficiency scenarios, and is particularly suitable for circuits that require high switching speeds and high power handling capabilities.
IPD35CN10N G-VB is a single N-channel power MOSFET in TO252 package with 100V drain-source voltage (VDS) and ±20V gate-source voltage (VGS), suitable for medium and high voltage power conversion and switching applications. Based on advanced trench technology (Trench Technology), the device has low on-resistance (RDS(ON)), can provide stable performance and low loss performance in high-efficiency scenarios, and is particularly suitable for circuits that require high switching speeds and high power handling capabilities.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | 30mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Polarity configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-on voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS=4.5V
- 30mΩ @ VGS=10V
- **Maximum drain current (ID)**: 40A
- **Technology**: Trench MOSFET (Trench Technology)
- **Package type**: TO252
- **Polarity configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-on voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS=4.5V
- 30mΩ @ VGS=10V
- **Maximum drain current (ID)**: 40A
- **Technology**: Trench MOSFET (Trench Technology)
Domain and module applications：
Application fields and module examples
1. **Power management module**: IPD35CN10N G-VB MOSFET can effectively reduce power loss in DC-DC converters and power switches. Its low on-resistance enables it to perform well in scenarios with large load changes, such as in server power modules, ensuring efficient energy conversion.
2. **Power tools and motor drives**: This MOSFET can be used in the drive circuit of power tools to help control the high-speed start and stop of the motor, and its 100V drain-source voltage ensures stability under high-current working conditions of power tools.
3. **Automotive electronic systems**: In the body electronic control units of automobiles (such as window lifts, seat adjustment systems), IPD35CN10N G-VB can be used to drive various electric components. Its high rated current (40A) allows it to handle larger power requirements in automotive applications.
4. **Photovoltaic inverter**: In photovoltaic power generation systems, IPD35CN10N G-VB can be used for DC-AC conversion to ensure efficient energy conversion and low energy loss in solar power generation devices.
With its excellent on-resistance and high rated current, this product can be widely used in various power modules that require high-efficiency switching and low conduction loss.
1. **Power management module**: IPD35CN10N G-VB MOSFET can effectively reduce power loss in DC-DC converters and power switches. Its low on-resistance enables it to perform well in scenarios with large load changes, such as in server power modules, ensuring efficient energy conversion.
2. **Power tools and motor drives**: This MOSFET can be used in the drive circuit of power tools to help control the high-speed start and stop of the motor, and its 100V drain-source voltage ensures stability under high-current working conditions of power tools.
3. **Automotive electronic systems**: In the body electronic control units of automobiles (such as window lifts, seat adjustment systems), IPD35CN10N G-VB can be used to drive various electric components. Its high rated current (40A) allows it to handle larger power requirements in automotive applications.
4. **Photovoltaic inverter**: In photovoltaic power generation systems, IPD35CN10N G-VB can be used for DC-AC conversion to ensure efficient energy conversion and low energy loss in solar power generation devices.
With its excellent on-resistance and high rated current, this product can be widely used in various power modules that require high-efficiency switching and low conduction loss.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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