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IPD350N06L G-VB Product details
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1. IPD350N06L G-VB Product Introduction
IPD350N06L G-VB is a single N-channel MOSFET with high-efficiency performance, packaged in TO252, designed for high-efficiency power conversion and switching applications. The maximum drain-source voltage of this MOSFET is 60V, the gate-source voltage is ±20V, the on-resistance is as low as 25mΩ (at VGS=10V), and it can carry up to 45A of current using advanced Trench technology. This product has low on-resistance and low gate threshold voltage, suitable for applications requiring high switching speed and high efficiency.
IPD350N06L G-VB is a single N-channel MOSFET with high-efficiency performance, packaged in TO252, designed for high-efficiency power conversion and switching applications. The maximum drain-source voltage of this MOSFET is 60V, the gate-source voltage is ±20V, the on-resistance is as low as 25mΩ (at VGS=10V), and it can carry up to 45A of current using advanced Trench technology. This product has low on-resistance and low gate threshold voltage, suitable for applications requiring high switching speed and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 45A | 25mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. IPD350N06L G-VB Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**: 30mΩ@VGS=4.5V, 25mΩ@VGS=10V
- **Drain current (ID)**: 45A
- **Technology**: Trench
- **Other features**: Low on-resistance, fast switching speed, low gate charge, suitable for high frequency applications.
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**: 30mΩ@VGS=4.5V, 25mΩ@VGS=10V
- **Drain current (ID)**: 45A
- **Technology**: Trench
- **Other features**: Low on-resistance, fast switching speed, low gate charge, suitable for high frequency applications.
Domain and module applications：
III. Application fields and module examples of IPD350N06L G-VB
1. **Power management module**: Due to the low on-resistance and high current capability of the device, the IPD350N06L G-VB is very suitable for high-efficiency power management systems such as DC-DC converters and power adapters, which can effectively reduce energy loss and improve conversion efficiency.
2. **Motor driver**: The fast switching capability of this MOSFET makes it suitable for high-speed switching applications in motor control, such as brushless DC motor drivers. In applications that require current control, this MOSFET can provide higher efficiency and performance.
3. **Automotive electronic module**: Its high withstand voltage and strong current carrying capacity are very suitable for load switch applications in automotive electronics, especially in battery management systems (BMS), electronic control units (ECUs) and other high-power demand applications.
4. **Industrial control equipment**: Due to its high current carrying capacity and low power consumption, the IPD350N06L G-VB has important applications in industrial automation equipment, smart meters and other control modules.
Applications in these areas take advantage of its efficient conduction performance, fast switching speed and high current carrying capability, making it an ideal choice for high-efficiency power conversion and load control.
1. **Power management module**: Due to the low on-resistance and high current capability of the device, the IPD350N06L G-VB is very suitable for high-efficiency power management systems such as DC-DC converters and power adapters, which can effectively reduce energy loss and improve conversion efficiency.
2. **Motor driver**: The fast switching capability of this MOSFET makes it suitable for high-speed switching applications in motor control, such as brushless DC motor drivers. In applications that require current control, this MOSFET can provide higher efficiency and performance.
3. **Automotive electronic module**: Its high withstand voltage and strong current carrying capacity are very suitable for load switch applications in automotive electronics, especially in battery management systems (BMS), electronic control units (ECUs) and other high-power demand applications.
4. **Industrial control equipment**: Due to its high current carrying capacity and low power consumption, the IPD350N06L G-VB has important applications in industrial automation equipment, smart meters and other control modules.
Applications in these areas take advantage of its efficient conduction performance, fast switching speed and high current carrying capability, making it an ideal choice for high-efficiency power conversion and load control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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