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IPD33CN10N G-VB Product details
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1. IPD33CN10N G-VB Product Introduction
IPD33CN10N G-VB is a unipolar N-channel MOSFET in TO252 package with efficient current control capability and low on-resistance, suitable for applications requiring high reliability and high performance. Its 100V breakdown voltage (VDS) and 40A current carrying capacity make it perform well in various power management and load switch control. The use of advanced Trench technology can reduce conduction loss and increase switching speed, making it suitable for high-frequency applications.
IPD33CN10N G-VB is a unipolar N-channel MOSFET in TO252 package with efficient current control capability and low on-resistance, suitable for applications requiring high reliability and high performance. Its 100V breakdown voltage (VDS) and 40A current carrying capacity make it perform well in various power management and load switch control. The use of advanced Trench technology can reduce conduction loss and increase switching speed, making it suitable for high-frequency applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | 30mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. IPD33CN10N G-VB Detailed parameter description
- **Package type**: TO252
- **Channel configuration**: Unipolar N-channel
- **Drain-source breakdown voltage (VDS)**: 100V
- **Gate drive voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS = 4.5V
- 30mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 40A
- **Technology**: Trench (trench technology)
- **Package type**: TO252
- **Channel configuration**: Unipolar N-channel
- **Drain-source breakdown voltage (VDS)**: 100V
- **Gate drive voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS = 4.5V
- 30mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 40A
- **Technology**: Trench (trench technology)
Domain and module applications：
III. Application fields and module examples
1. **Power management module**:
The high current handling capability and low on-resistance of IPD33CN10N G-VB make it very suitable for applications such as high-efficiency DC-DC converters and power modules. Such modules require MOSFETs to maintain low losses during high-frequency switching to ensure the overall energy efficiency of the circuit.
2. **Motor drive**:
This MOSFET can be used in small motor control and drive applications. Its high current carrying capacity and low RDS(ON) characteristics enable it to effectively reduce power consumption in situations requiring fast switching response and high current, such as motor drives in electric vehicles or industrial automation systems.
3. **Load switch and protection circuit**:
In the load switch and protection circuit, IPD33CN10N G-VB can achieve stable current management and overcurrent protection through its reliable breakdown voltage and low on-resistance, which is particularly suitable for current switching and protection in battery management systems.
4. **Photovoltaic inverter**:
This MOSFET can also be used in the inverter module of the solar photovoltaic system. Its 100V drain-source voltage and efficient switching performance can help the inverter improve the conversion efficiency and is suitable for the DC to AC power conversion link in the photovoltaic power generation system.
1. **Power management module**:
The high current handling capability and low on-resistance of IPD33CN10N G-VB make it very suitable for applications such as high-efficiency DC-DC converters and power modules. Such modules require MOSFETs to maintain low losses during high-frequency switching to ensure the overall energy efficiency of the circuit.
2. **Motor drive**:
This MOSFET can be used in small motor control and drive applications. Its high current carrying capacity and low RDS(ON) characteristics enable it to effectively reduce power consumption in situations requiring fast switching response and high current, such as motor drives in electric vehicles or industrial automation systems.
3. **Load switch and protection circuit**:
In the load switch and protection circuit, IPD33CN10N G-VB can achieve stable current management and overcurrent protection through its reliable breakdown voltage and low on-resistance, which is particularly suitable for current switching and protection in battery management systems.
4. **Photovoltaic inverter**:
This MOSFET can also be used in the inverter module of the solar photovoltaic system. Its 100V drain-source voltage and efficient switching performance can help the inverter improve the conversion efficiency and is suitable for the DC to AC power conversion link in the photovoltaic power generation system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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