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IPD320N20N3 G-VB Product details
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Product Introduction - IPD320N20N3 G-VB
IPD320N20N3 G-VB is a high-efficiency single N-channel power MOSFET in TO252 package, designed for high voltage and high current applications. Its typical breakdown voltage is 200V and the gate drive voltage is ±20V. Based on Trench technology, the device has low on-resistance (RDS(ON)=55mΩ@VGS=10V) and high on-current capability (30A), suitable for high-efficiency power management and fast switching requirements.
IPD320N20N3 G-VB is a high-efficiency single N-channel power MOSFET in TO252 package, designed for high voltage and high current applications. Its typical breakdown voltage is 200V and the gate drive voltage is ±20V. Based on Trench technology, the device has low on-resistance (RDS(ON)=55mΩ@VGS=10V) and high on-current capability (30A), suitable for high-efficiency power management and fast switching requirements.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 30A | 55mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 30A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 30A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 55mΩ @ VGS=10V
- **Drain current (ID)**: 30A
- **Technology type**: Trench technology
- **Thermal resistance**: With low thermal resistance characteristics, suitable for high power applications
- **Package type**: TO252
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 55mΩ @ VGS=10V
- **Drain current (ID)**: 30A
- **Technology type**: Trench technology
- **Thermal resistance**: With low thermal resistance characteristics, suitable for high power applications
Domain and module applications：
Applications and module examples
1. **Switching Power Supply (SMPS)**
The high voltage characteristics and low on-resistance of IPD320N20N3 G-VB make it very suitable for use in high-efficiency switching power supplies. It can improve power conversion efficiency and reduce power consumption, while withstanding higher operating voltages, and adapt to the power management needs of various industrial and consumer electronic devices.
2. **Motor Drive and Control**
The high current handling capability and low switching loss of this MOSFET make it an excellent performer in motor drive modules, especially in motor control modules for power tools, industrial robots, and household appliances.
3. **Inverter and Photovoltaic System**
In photovoltaic inverter applications, IPD320N20N3 G-VB can handle higher DC voltages and improve energy conversion efficiency, and is widely used in DC/AC inverter modules in photovoltaic systems.
4. **Battery Management System (BMS)**
It can help manage high current loads in the battery management system, especially in electric vehicles or energy storage equipment, providing safe power control and protection functions.
5. **Uninterruptible Power System (UPS)**
In UPS, IPD320N20N3 G-VB provides reliable switching performance, ensuring that power supply can be quickly switched in the event of a power failure to keep the equipment running normally.
1. **Switching Power Supply (SMPS)**
The high voltage characteristics and low on-resistance of IPD320N20N3 G-VB make it very suitable for use in high-efficiency switching power supplies. It can improve power conversion efficiency and reduce power consumption, while withstanding higher operating voltages, and adapt to the power management needs of various industrial and consumer electronic devices.
2. **Motor Drive and Control**
The high current handling capability and low switching loss of this MOSFET make it an excellent performer in motor drive modules, especially in motor control modules for power tools, industrial robots, and household appliances.
3. **Inverter and Photovoltaic System**
In photovoltaic inverter applications, IPD320N20N3 G-VB can handle higher DC voltages and improve energy conversion efficiency, and is widely used in DC/AC inverter modules in photovoltaic systems.
4. **Battery Management System (BMS)**
It can help manage high current loads in the battery management system, especially in electric vehicles or energy storage equipment, providing safe power control and protection functions.
5. **Uninterruptible Power System (UPS)**
In UPS, IPD320N20N3 G-VB provides reliable switching performance, ensuring that power supply can be quickly switched in the event of a power failure to keep the equipment running normally.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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