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IPD30N10S3L-34-VB Product details
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Product Introduction:
IPD30N10S3L-34-VB is a single N-channel MOSFET in TO252 package with high voltage and current handling capabilities, suitable for high-performance switching applications. It has a maximum drain-source voltage of 100V, a gate-source voltage of ±20V, a turn-on threshold voltage as low as 1.8V, and a low on-resistance (RDS(ON)), which ensures low loss and high efficiency. This model uses advanced Trench technology to further improve the current density and switching efficiency of the device, and can maintain stable performance under high current conditions.
IPD30N10S3L-34-VB is a single N-channel MOSFET in TO252 package with high voltage and current handling capabilities, suitable for high-performance switching applications. It has a maximum drain-source voltage of 100V, a gate-source voltage of ±20V, a turn-on threshold voltage as low as 1.8V, and a low on-resistance (RDS(ON)), which ensures low loss and high efficiency. This model uses advanced Trench technology to further improve the current density and switching efficiency of the device, and can maintain stable performance under high current conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | 30mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Parameter description:
- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS=4.5V
- 30mΩ @ VGS=10V
- **Drain current (ID)**: 40A
- **Technology type**: Trench
- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS=4.5V
- 30mΩ @ VGS=10V
- **Drain current (ID)**: 40A
- **Technology type**: Trench
Domain and module applications：
Applications and modules:
1. **Automotive electronics**: Due to its high current handling capability and low on-resistance, the IPD30N10S3L-34-VB is suitable for power management systems in automotive electronics, such as DC-DC converters, engine control modules, and electric motor controllers. These applications require devices that handle high voltages and high currents to ensure the stability and high efficiency of automotive systems.
2. **Power management systems**: Due to its low conduction losses, this MOSFET is ideal for use in switching power supplies (SMPS) and load switching applications. The efficient switching characteristics of the IPD30N10S3L-34-VB can help reduce power losses, thereby improving the overall efficiency of the power system.
3. **Industrial control equipment**: In motor drives and servo control systems in the industrial field, the IPD30N10S3L-34-VB can effectively manage high-power loads, ensuring that the MOSFET can switch quickly and maintain low power consumption when the system operates at high power density.
4. **Solar Inverters**: Due to its ability to handle high voltages and currents and its good switching performance, this MOSFET is suitable for use in solar photovoltaic inverters to maximize energy efficiency during the conversion process from DC to AC.
5. **Communication Equipment**: In communication power supplies and base station applications that require efficient switching, the IPD30N10S3L-34-VB can provide a stable power management solution.
1. **Automotive electronics**: Due to its high current handling capability and low on-resistance, the IPD30N10S3L-34-VB is suitable for power management systems in automotive electronics, such as DC-DC converters, engine control modules, and electric motor controllers. These applications require devices that handle high voltages and high currents to ensure the stability and high efficiency of automotive systems.
2. **Power management systems**: Due to its low conduction losses, this MOSFET is ideal for use in switching power supplies (SMPS) and load switching applications. The efficient switching characteristics of the IPD30N10S3L-34-VB can help reduce power losses, thereby improving the overall efficiency of the power system.
3. **Industrial control equipment**: In motor drives and servo control systems in the industrial field, the IPD30N10S3L-34-VB can effectively manage high-power loads, ensuring that the MOSFET can switch quickly and maintain low power consumption when the system operates at high power density.
4. **Solar Inverters**: Due to its ability to handle high voltages and currents and its good switching performance, this MOSFET is suitable for use in solar photovoltaic inverters to maximize energy efficiency during the conversion process from DC to AC.
5. **Communication Equipment**: In communication power supplies and base station applications that require efficient switching, the IPD30N10S3L-34-VB can provide a stable power management solution.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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