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IPD30N08S2-22-VB Product details
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1. IPD30N08S2-22-VB Product Introduction
IPD30N08S2-22-VB is an N-channel power MOSFET in TO252 package with high voltage tolerance and high efficiency. The device has a drain-source voltage (VDS) of 100V and can withstand a current of up to 45A, making it suitable for circuit designs with high power requirements. This MOSFET uses advanced trench technology and has a lower on-resistance (RDS(ON)), thereby reducing power loss and improving system efficiency. Its on-resistance is 18mΩ@VGS=10V and the gate threshold voltage (Vth) is 1.8V, ensuring fast switching even at a lower gate drive voltage.
IPD30N08S2-22-VB is an N-channel power MOSFET in TO252 package with high voltage tolerance and high efficiency. The device has a drain-source voltage (VDS) of 100V and can withstand a current of up to 45A, making it suitable for circuit designs with high power requirements. This MOSFET uses advanced trench technology and has a lower on-resistance (RDS(ON)), thereby reducing power loss and improving system efficiency. Its on-resistance is 18mΩ@VGS=10V and the gate threshold voltage (Vth) is 1.8V, ensuring fast switching even at a lower gate drive voltage.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 45A | 18mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. IPD30N08S2-22-VB Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single channel N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 18mΩ @ VGS=10V
- **Drain current (ID)**: 45A
- **Technology**: Trench technology
- **Thermal resistance (Rth)**: Depends on the specific heat dissipation conditions, usually designed for heat dissipation requirements in high-power applications
- **Package type**: TO252
- **Configuration**: Single channel N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 18mΩ @ VGS=10V
- **Drain current (ID)**: 45A
- **Technology**: Trench technology
- **Thermal resistance (Rth)**: Depends on the specific heat dissipation conditions, usually designed for heat dissipation requirements in high-power applications
Domain and module applications：
3. Application fields and module examples
1. **Power tools and motor control**
The IPD30N08S2-22-VB's 100V drain-source voltage and 45A current carrying capacity make it very suitable for use in power tools and motor control applications. Such equipment requires high-power and high-efficiency MOSFETs to achieve precise drive and control of the motor while reducing power consumption and heat.
2. **Power management and converter modules**
This MOSFET can be used in power management applications such as switching power supplies (SMPS) and DC-DC converters. Its low on-resistance and high current capability help improve conversion efficiency and reduce power losses, making it suitable for power modules in industrial and consumer electronics.
3. **Automotive electronics and electric systems**
Due to its high withstand voltage and high reliability, IPD30N08S2-22-VB is also widely used in automotive electronics, especially in electric systems and battery management modules, such as electric vehicle drive systems, start/stop control modules, and other applications that require efficient power switches.
4. **Industrial control and load switches**
In industrial automation and control systems, IPD30N08S2-22-VB is used as a core component of load switches or protection circuits to ensure the stability and reliability of the system under high loads.
1. **Power tools and motor control**
The IPD30N08S2-22-VB's 100V drain-source voltage and 45A current carrying capacity make it very suitable for use in power tools and motor control applications. Such equipment requires high-power and high-efficiency MOSFETs to achieve precise drive and control of the motor while reducing power consumption and heat.
2. **Power management and converter modules**
This MOSFET can be used in power management applications such as switching power supplies (SMPS) and DC-DC converters. Its low on-resistance and high current capability help improve conversion efficiency and reduce power losses, making it suitable for power modules in industrial and consumer electronics.
3. **Automotive electronics and electric systems**
Due to its high withstand voltage and high reliability, IPD30N08S2-22-VB is also widely used in automotive electronics, especially in electric systems and battery management modules, such as electric vehicle drive systems, start/stop control modules, and other applications that require efficient power switches.
4. **Industrial control and load switches**
In industrial automation and control systems, IPD30N08S2-22-VB is used as a core component of load switches or protection circuits to ensure the stability and reliability of the system under high loads.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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