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IPD30N03S2L-10-VB Product details
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IPD30N03S2L-10-VB Product Introduction
**IPD30N03S2L-10-VB** is a high-performance N-Channel MOSFET in TO252 package, suitable for power switching and regulation applications requiring high current and low resistance. It has high withstand voltage and low RDS(ON), which can effectively reduce power consumption and improve system efficiency. The use of this MOSFET is based on Trench technology, which helps to increase switching speed and reduce switching losses. Its wide voltage range and high current handling capability make it perform well in a variety of high-performance electronic devices.
**IPD30N03S2L-10-VB** is a high-performance N-Channel MOSFET in TO252 package, suitable for power switching and regulation applications requiring high current and low resistance. It has high withstand voltage and low RDS(ON), which can effectively reduce power consumption and improve system efficiency. The use of this MOSFET is based on Trench technology, which helps to increase switching speed and reduce switching losses. Its wide voltage range and high current handling capability make it perform well in a variety of high-performance electronic devices.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
IPD30N03S2L-10-VB Detailed parameter description
- **Model**: IPD30N03S2L-10-VB
- **Package**: TO252
- **Configuration**: Single N-Channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 80A
- **Technology**: Trench
- **Model**: IPD30N03S2L-10-VB
- **Package**: TO252
- **Configuration**: Single N-Channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 80A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **Power management**: The IPD30N03S2L-10-VB is ideal for high-efficiency power management modules such as DC-DC converters. In such applications, its low RDS(ON) can effectively reduce conduction losses, improve conversion efficiency, and reduce heat dissipation requirements.
2. **Electric vehicles (EV) and hybrid vehicles**: In the battery management system of electric vehicles, the high current handling capability and low on-resistance of this MOSFET are critical to improving the overall energy efficiency of the system and extending battery life. It can operate stably under high power loads to ensure the reliability of electric vehicles.
3. **High power switching**: Due to its high current capability and low on-resistance, the IPD30N03S2L-10-VB is suitable for a variety of high power switching applications such as motor drives and power amplifiers. These applications require MOSFETs to maintain low energy losses and heat generation during fast switching operations.
4. **Consumer electronics**: In modern consumer electronics, such as computer power supplies and home appliances, the IPD30N03S2L-10-VB can be used for power switches and protection circuits. Its low RDS(ON) characteristics can improve the energy efficiency and stability of the system while reducing power consumption.
5. **Communication equipment**: In wireless communication equipment, such as base stations and modems, this MOSFET can provide stable switching performance in high-frequency operation, and the low on-resistance can reduce signal distortion and power consumption.
The high performance characteristics of this MOSFET make it have a wide range of application potential in multiple fields.
1. **Power management**: The IPD30N03S2L-10-VB is ideal for high-efficiency power management modules such as DC-DC converters. In such applications, its low RDS(ON) can effectively reduce conduction losses, improve conversion efficiency, and reduce heat dissipation requirements.
2. **Electric vehicles (EV) and hybrid vehicles**: In the battery management system of electric vehicles, the high current handling capability and low on-resistance of this MOSFET are critical to improving the overall energy efficiency of the system and extending battery life. It can operate stably under high power loads to ensure the reliability of electric vehicles.
3. **High power switching**: Due to its high current capability and low on-resistance, the IPD30N03S2L-10-VB is suitable for a variety of high power switching applications such as motor drives and power amplifiers. These applications require MOSFETs to maintain low energy losses and heat generation during fast switching operations.
4. **Consumer electronics**: In modern consumer electronics, such as computer power supplies and home appliances, the IPD30N03S2L-10-VB can be used for power switches and protection circuits. Its low RDS(ON) characteristics can improve the energy efficiency and stability of the system while reducing power consumption.
5. **Communication equipment**: In wireless communication equipment, such as base stations and modems, this MOSFET can provide stable switching performance in high-frequency operation, and the low on-resistance can reduce signal distortion and power consumption.
The high performance characteristics of this MOSFET make it have a wide range of application potential in multiple fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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