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IPD25CNE8N G-VB Product details
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Product Introduction
**IPD25CNE8N G-VB** is a high-performance single N-channel MOSFET in TO252 package, widely used in power management and switching applications requiring high current and low on-resistance. This MOSFET has a maximum drain-source voltage of 80V, good switching performance and low RDS(ON) value, making it excellent in high-efficiency conversion and current control.
**IPD25CNE8N G-VB** is a high-performance single N-channel MOSFET in TO252 package, widely used in power management and switching applications requiring high current and low on-resistance. This MOSFET has a maximum drain-source voltage of 80V, good switching performance and low RDS(ON) value, making it excellent in high-efficiency conversion and current control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 80V | 3V | 75A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 80V | 3V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 80V | 3V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: IPD25CNE8N G-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 80V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 5mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 75A
- **Technology**: Trench
- **Model**: IPD25CNE8N G-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 80V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 5mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 75A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **Power management**: In power supply modules, the low RDS(ON) and high current capability of the IPD25CNE8N G-VB make it ideal for use as a high-efficiency power switch, such as DC-DC converters and battery management systems. This helps improve power efficiency, reduce power consumption, and ensure system stability under high load conditions.
2. **Motor drive**: Due to its ability to handle high currents and provide low on-resistance, the IPD25CNE8N G-VB is often used in motor drive circuits such as electric vehicles and industrial automation equipment. It can effectively control the current during motor startup and operation, improving the overall performance of the system.
3. **LED drive**: In LED lighting systems, the IPD25CNE8N G-VB can be used to drive high-power LED lamps. It can drive LEDs with lower power consumption, thereby improving light efficiency and extending the life of LEDs.
4. **Switching circuit**: The high switching speed and low on-resistance of this MOSFET make it perform well in switching circuits, and it is suitable for applications such as power switches, load switches, and protection circuits. These applications usually require high efficiency and low heat generation, and IPD25CNE8N G-VB can meet these requirements.
The high performance characteristics of IPD25CNE8N G-VB make it perform well in a variety of applications that require high efficiency and low power consumption, and it is an ideal choice for electronic designers and engineers when designing high-efficiency power supplies and control systems.
1. **Power management**: In power supply modules, the low RDS(ON) and high current capability of the IPD25CNE8N G-VB make it ideal for use as a high-efficiency power switch, such as DC-DC converters and battery management systems. This helps improve power efficiency, reduce power consumption, and ensure system stability under high load conditions.
2. **Motor drive**: Due to its ability to handle high currents and provide low on-resistance, the IPD25CNE8N G-VB is often used in motor drive circuits such as electric vehicles and industrial automation equipment. It can effectively control the current during motor startup and operation, improving the overall performance of the system.
3. **LED drive**: In LED lighting systems, the IPD25CNE8N G-VB can be used to drive high-power LED lamps. It can drive LEDs with lower power consumption, thereby improving light efficiency and extending the life of LEDs.
4. **Switching circuit**: The high switching speed and low on-resistance of this MOSFET make it perform well in switching circuits, and it is suitable for applications such as power switches, load switches, and protection circuits. These applications usually require high efficiency and low heat generation, and IPD25CNE8N G-VB can meet these requirements.
The high performance characteristics of IPD25CNE8N G-VB make it perform well in a variety of applications that require high efficiency and low power consumption, and it is an ideal choice for electronic designers and engineers when designing high-efficiency power supplies and control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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