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IPD25CN10N G-VB Product details
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Product Introduction:
IPD25CN10N G-VB is a single N-channel MOSFET in TO252 package, with efficient switching performance and low on-resistance, designed for high power handling applications. Its main features are 100V drain-source voltage (VDS), ±20V gate-source voltage (VGS), and only 18mΩ on-resistance when VGS is 10V. This MOSFET adopts Trench trench technology, with higher switching speed and lower power consumption, suitable for efficient power conversion and management scenarios.
IPD25CN10N G-VB is a single N-channel MOSFET in TO252 package, with efficient switching performance and low on-resistance, designed for high power handling applications. Its main features are 100V drain-source voltage (VDS), ±20V gate-source voltage (VGS), and only 18mΩ on-resistance when VGS is 10V. This MOSFET adopts Trench trench technology, with higher switching speed and lower power consumption, suitable for efficient power conversion and management scenarios.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 45A | 18mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Parameter description:
- **Package type**: TO252
- **Polarity**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 18mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 45A
- **Technology**: Trench technology
- **Package type**: TO252
- **Polarity**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 18mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 45A
- **Technology**: Trench technology
Domain and module applications：
Application fields and module examples:
1. **Electric vehicles**: IPD25CN10N G-VB can be used in DC-DC converters and inverter modules in electric vehicles. In these systems, MOSFETs can provide efficient power transmission and conversion while maintaining low losses and high voltage resistance.
2. **Industrial automation**: This type of MOSFET is suitable for motor drive modules in industrial automation equipment. Its high current carrying capacity and low on-resistance enable it to provide efficient power control in industrial servo systems, reduce heat generation, and improve system reliability.
3. **Switching mode power supply (SMPS)**: In a switching mode power supply (SMPS), IPD25CN10N G-VB can be used as the main power switching device, providing fast switching speed and low conduction loss, thereby improving the conversion efficiency of the power supply, and is suitable for communication equipment and data center power modules.
4. **Solar inverter**: It can also be used in solar inverters to convert DC power to AC power. The high voltage and high current handling capabilities of MOSFETs make them very effective in processing energy obtained from photovoltaic panels.
This MOSFET is suitable for a wide range of applications requiring high efficiency, low heat loss and high reliability, and can meet the various needs of modern power management and conversion.
1. **Electric vehicles**: IPD25CN10N G-VB can be used in DC-DC converters and inverter modules in electric vehicles. In these systems, MOSFETs can provide efficient power transmission and conversion while maintaining low losses and high voltage resistance.
2. **Industrial automation**: This type of MOSFET is suitable for motor drive modules in industrial automation equipment. Its high current carrying capacity and low on-resistance enable it to provide efficient power control in industrial servo systems, reduce heat generation, and improve system reliability.
3. **Switching mode power supply (SMPS)**: In a switching mode power supply (SMPS), IPD25CN10N G-VB can be used as the main power switching device, providing fast switching speed and low conduction loss, thereby improving the conversion efficiency of the power supply, and is suitable for communication equipment and data center power modules.
4. **Solar inverter**: It can also be used in solar inverters to convert DC power to AC power. The high voltage and high current handling capabilities of MOSFETs make them very effective in processing energy obtained from photovoltaic panels.
This MOSFET is suitable for a wide range of applications requiring high efficiency, low heat loss and high reliability, and can meet the various needs of modern power management and conversion.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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