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IPD250N06N3 G-VB Product details
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1. IPD250N06N3 G-VB Product Introduction
IPD250N06N3 G-VB is a single N-channel MOSFET in TO252 package with a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V, suitable for high-efficiency switching conversion and power management applications. With a threshold voltage (Vth) of 1.7V and the use of trench technology, its on-resistance (RDS(ON)) is 30mΩ (@VGS=4.5V) and 25mΩ (@VGS=10V), respectively, and can support currents up to 45A. The product has low conduction loss and fast switching characteristics, suitable for applications with high-efficiency power conversion and low losses.
IPD250N06N3 G-VB is a single N-channel MOSFET in TO252 package with a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V, suitable for high-efficiency switching conversion and power management applications. With a threshold voltage (Vth) of 1.7V and the use of trench technology, its on-resistance (RDS(ON)) is 30mΩ (@VGS=4.5V) and 25mΩ (@VGS=10V), respectively, and can support currents up to 45A. The product has low conduction loss and fast switching characteristics, suitable for applications with high-efficiency power conversion and low losses.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 45A | 25mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. Detailed parameter description of IPD250N06N3 G-VB
1. **Package type**: TO252
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 60V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 1.7V
6. **On-resistance (RDS(ON))**:
- 30mΩ @ VGS = 4.5V
- 25mΩ @ VGS = 10V
7. **Maximum drain current (ID)**: 45A
8. **Technology**: Trench
9. **Operating temperature range**: -55°C ~ 175°C
10. **Maximum power consumption**: Depends on heat dissipation conditions, but TO252 package has better thermal management performance.
1. **Package type**: TO252
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 60V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 1.7V
6. **On-resistance (RDS(ON))**:
- 30mΩ @ VGS = 4.5V
- 25mΩ @ VGS = 10V
7. **Maximum drain current (ID)**: 45A
8. **Technology**: Trench
9. **Operating temperature range**: -55°C ~ 175°C
10. **Maximum power consumption**: Depends on heat dissipation conditions, but TO252 package has better thermal management performance.
Domain and module applications：
III. Application fields and module examples
1. **Power management module**:
In switching power supplies (SMPS) and DC-DC converters (DC-DC Converters), IPD250N06N3 G-VB can be used to improve conversion efficiency and reduce power loss with its low RDS(ON) and high current carrying capacity, and is particularly suitable for notebook adapters, server power supplies, etc.
2. **Automotive electronics**:
In the motor drive module, DC-DC converter and battery management system of electric vehicles, this MOSFET can provide efficient switching performance in motor control and battery protection, and enhance the stability and durability of the system.
3. **Industrial control**:
In industrial automation equipment, such as PLC, inverter and motor control systems, the fast switching characteristics of IPD250N06N3 G-VB help improve the efficiency of the overall control system and reduce energy loss.
4. **Consumer electronics**:
In the power management modules of consumer electronics such as TVs and audio equipment, this MOSFET can be used for efficient power conversion, providing stable power supply, reducing power consumption and extending product life.
This MOSFET has excellent on-resistance and high current carrying capacity, making it widely used in the field of high efficiency and low power consumption.
1. **Power management module**:
In switching power supplies (SMPS) and DC-DC converters (DC-DC Converters), IPD250N06N3 G-VB can be used to improve conversion efficiency and reduce power loss with its low RDS(ON) and high current carrying capacity, and is particularly suitable for notebook adapters, server power supplies, etc.
2. **Automotive electronics**:
In the motor drive module, DC-DC converter and battery management system of electric vehicles, this MOSFET can provide efficient switching performance in motor control and battery protection, and enhance the stability and durability of the system.
3. **Industrial control**:
In industrial automation equipment, such as PLC, inverter and motor control systems, the fast switching characteristics of IPD250N06N3 G-VB help improve the efficiency of the overall control system and reduce energy loss.
4. **Consumer electronics**:
In the power management modules of consumer electronics such as TVs and audio equipment, this MOSFET can be used for efficient power conversion, providing stable power supply, reducing power consumption and extending product life.
This MOSFET has excellent on-resistance and high current carrying capacity, making it widely used in the field of high efficiency and low power consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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