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IPD230N06L G-VB Product details
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IPD230N06L G-VB Product Introduction
IPD230N06L G-VB is a high-performance single N-channel power MOSFET in TO252 package with excellent switching performance and low on-resistance. Its maximum drain-source voltage (VDS) is 60V and the maximum gate-source voltage (VGS) is ±20V. Based on advanced trench technology, this MOSFET can provide low on-resistance under low gate voltage conditions, suitable for high-efficiency power management applications.
IPD230N06L G-VB is a high-performance single N-channel power MOSFET in TO252 package with excellent switching performance and low on-resistance. Its maximum drain-source voltage (VDS) is 60V and the maximum gate-source voltage (VGS) is ±20V. Based on advanced trench technology, this MOSFET can provide low on-resistance under low gate voltage conditions, suitable for high-efficiency power management applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 45A | 25mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
IPD230N06L G-VB Detailed parameter description
- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 30mΩ @ VGS=4.5V
- 25mΩ @ VGS=10V
- **Maximum continuous leakage current (ID)**: 45A
- **Technology type**: Trench (trench technology)
- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 30mΩ @ VGS=4.5V
- 25mΩ @ VGS=10V
- **Maximum continuous leakage current (ID)**: 45A
- **Technology type**: Trench (trench technology)
Domain and module applications：
Applications and modules
1. **Automotive electronics**: Due to its low on-resistance and high current carrying capacity, IPD230N06L G-VB is often used in automotive power management modules (such as DC-DC converters, automotive LED drivers). It can play a key role in efficient power conversion and load management.
2. **Power management**: This MOSFET is suitable for high-efficiency switching power supplies and adapters, especially for devices that need to operate at medium and high power, such as power modules for laptops and desktops. In these applications, it can ensure low switching losses and efficient energy transfer.
3. **Industrial control systems**: In industrial equipment, IPD230N06L G-VB is also commonly used in motor drives and control systems to drive high-power loads through its high current capability and durability to ensure system stability and reliability.
4. **Consumer Electronic Devices**: This MOSFET is also suitable for power management modules of various consumer electronic devices, such as battery management systems (BMS), wireless chargers and other devices, in which it can provide efficient power processing and thermal management.
These fields have high requirements for MOSFET, and the low on-resistance and high switching speed of IPD230N06L G-VB make it an ideal choice for many high-efficiency and high-current applications.
1. **Automotive electronics**: Due to its low on-resistance and high current carrying capacity, IPD230N06L G-VB is often used in automotive power management modules (such as DC-DC converters, automotive LED drivers). It can play a key role in efficient power conversion and load management.
2. **Power management**: This MOSFET is suitable for high-efficiency switching power supplies and adapters, especially for devices that need to operate at medium and high power, such as power modules for laptops and desktops. In these applications, it can ensure low switching losses and efficient energy transfer.
3. **Industrial control systems**: In industrial equipment, IPD230N06L G-VB is also commonly used in motor drives and control systems to drive high-power loads through its high current capability and durability to ensure system stability and reliability.
4. **Consumer Electronic Devices**: This MOSFET is also suitable for power management modules of various consumer electronic devices, such as battery management systems (BMS), wireless chargers and other devices, in which it can provide efficient power processing and thermal management.
These fields have high requirements for MOSFET, and the low on-resistance and high switching speed of IPD230N06L G-VB make it an ideal choice for many high-efficiency and high-current applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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