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IPD180N10N3 G-VB Product details
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Product Introduction: IPD180N10N3 G-VB MOSFET
IPD180N10N3 G-VB is a high-performance single N-channel MOSFET in TO252 package, designed for high-efficiency power conversion and switching applications. Its drain-source voltage (VDS) is 100V and the maximum drain current (ID) is 45A, which is suitable for medium and high voltage power applications. The gate-source voltage (VGS) of this product is ±20V and the turn-on threshold voltage (Vth) is 1.8V, ensuring that it can operate efficiently at low gate drive voltage. Using Trench technology, IPD180N10N3 G-VB provides a lower on-resistance (RDS(ON)), which is only 18mΩ at VGS = 10V, thereby greatly reducing power loss and improving the efficiency of the overall circuit.
IPD180N10N3 G-VB is a high-performance single N-channel MOSFET in TO252 package, designed for high-efficiency power conversion and switching applications. Its drain-source voltage (VDS) is 100V and the maximum drain current (ID) is 45A, which is suitable for medium and high voltage power applications. The gate-source voltage (VGS) of this product is ±20V and the turn-on threshold voltage (Vth) is 1.8V, ensuring that it can operate efficiently at low gate drive voltage. Using Trench technology, IPD180N10N3 G-VB provides a lower on-resistance (RDS(ON)), which is only 18mΩ at VGS = 10V, thereby greatly reducing power loss and improving the efficiency of the overall circuit.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 45A | 18mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description:
- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 18mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 45A
- **Technology type**: Trench technology
- **Operating temperature range**: -55°C to 150°C
- **Package thermal resistance**: Low, suitable for heat dissipation design in high power applications
- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 18mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 45A
- **Technology type**: Trench technology
- **Operating temperature range**: -55°C to 150°C
- **Package thermal resistance**: Low, suitable for heat dissipation design in high power applications
Domain and module applications：
Application areas and module examples:
1. **Battery Management System (BMS)**: The IPD180N10N3 G-VB is ideal for battery management systems, especially in electric vehicles and energy storage devices. Such systems require MOSFETs that can handle higher voltages and currents, and the 100V VDS and 45A current handling capabilities of this model ensure that it plays an important role in BMS, ensuring efficient charging and discharging of the battery and current protection.
2. **DC-DC Converter**: In medium-voltage DC-DC converters, the low on-resistance and high current capability of the IPD180N10N3 G-VB can effectively reduce conduction losses, thereby improving conversion efficiency. Its Trench technology ensures fast switching speeds and less heat, and is suitable for converter modules in server power supplies, industrial control power supplies, and communication base station equipment.
3. **Photovoltaic Inverter**: In solar photovoltaic systems, the IPD180N10N3 G-VB is suitable for inverter circuits, providing stable current conversion in high voltage environments and ensuring efficient energy transmission. Its low on-resistance characteristics can effectively reduce energy loss and improve the overall output efficiency of the photovoltaic system.
4. **Power Tools**: For high-performance consumer electronics such as power tools, the high current handling capability and low power consumption of the IPD180N10N3 G-VB make it an ideal switching element. It can help power tools maintain high efficiency when working at high power and can reduce battery power consumption requirements in portable devices.
In summary, the IPD180N10N3 G-VB is a MOSFET that performs well in high-performance and high-current demand applications, and is very suitable for power management systems, photovoltaic inverters, and power tools.
1. **Battery Management System (BMS)**: The IPD180N10N3 G-VB is ideal for battery management systems, especially in electric vehicles and energy storage devices. Such systems require MOSFETs that can handle higher voltages and currents, and the 100V VDS and 45A current handling capabilities of this model ensure that it plays an important role in BMS, ensuring efficient charging and discharging of the battery and current protection.
2. **DC-DC Converter**: In medium-voltage DC-DC converters, the low on-resistance and high current capability of the IPD180N10N3 G-VB can effectively reduce conduction losses, thereby improving conversion efficiency. Its Trench technology ensures fast switching speeds and less heat, and is suitable for converter modules in server power supplies, industrial control power supplies, and communication base station equipment.
3. **Photovoltaic Inverter**: In solar photovoltaic systems, the IPD180N10N3 G-VB is suitable for inverter circuits, providing stable current conversion in high voltage environments and ensuring efficient energy transmission. Its low on-resistance characteristics can effectively reduce energy loss and improve the overall output efficiency of the photovoltaic system.
4. **Power Tools**: For high-performance consumer electronics such as power tools, the high current handling capability and low power consumption of the IPD180N10N3 G-VB make it an ideal switching element. It can help power tools maintain high efficiency when working at high power and can reduce battery power consumption requirements in portable devices.
In summary, the IPD180N10N3 G-VB is a MOSFET that performs well in high-performance and high-current demand applications, and is very suitable for power management systems, photovoltaic inverters, and power tools.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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