IPD170N04N G-VB Product details
Product introduction:
IPD170N04N G-VB is a single N-channel MOSFET in TO252 package, which is widely used in various low-voltage power management and switching applications. The device has a maximum drain-source voltage of 40V and a gate-source voltage tolerance of ±20V. It uses advanced Trench technology to provide lower on-resistance (RDS(ON)), thereby improving system efficiency and reliability. It is suitable for power supplies and switching circuits that require high efficiency and high current handling capabilities, and is an ideal choice for industries such as industry, power tools and automotive electronic systems.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **Package type**: TO252
- **Polarity configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 40V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 14mΩ @ VGS=4.5V
- 12mΩ @ VGS=10V
- **Maximum drain current (ID)**: 55A
- **Technology type**: Trench technology
- **Package form**: Surface mount (TO252), suitable for high-density circuit board design
- **Operating temperature range**: -55°C to 175°C
- **Power consumption**: 175W
Domain and module applications:
1. **Power management and conversion module**: IPD170N04N G-VB is commonly used in DC-DC power converters and synchronous rectifiers, especially in applications that require high efficiency and low switching losses. The device can reduce heat loss in power conversion and is very suitable for the design of laptops, servers and power adapters.
2. **Automotive electronic module**: The device can be used in electronic control modules (ECUs) in automobiles, especially battery management systems (BMS) and low-voltage power distribution modules. Its high current handling capability and low on-resistance can effectively improve the efficiency of the circuit and help vehicles achieve higher energy utilization.
3. **Industrial control and motor drive**: In industrial automation control systems and motor drive circuits, IPD170N04N G-VB can be used to control high-current loads such as motors, relays, and solenoid valves. Its reliable high current handling capability helps ensure long-term stable operation of the system.
4. **Power tools and household appliances**: This MOSFET is commonly found in the drive circuits of power tools and household appliances, such as electric drills and electric saws. With its low switching loss and efficient current handling capability, it can effectively reduce power consumption and increase the service life of the equipment.
5. **Low-voltage circuits in electric vehicles**: In the auxiliary systems of electric vehicles, the IPD170N04N G-VB can be used in various low-voltage control circuits, such as battery charge management and cooling fan control, to help improve the overall system efficiency of electric vehicles.
Technical support:
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