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IPD16CN10N G-VB Product details
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Product Introduction: IPD16CN10N G-VB MOSFET
IPD16CN10N G-VB is a high-performance single N-channel metal oxide semiconductor field effect transistor (MOSFET) in TO252 package with 100V drain-source voltage (VDS) and ±20V gate-source voltage (VGS). It is designed to provide excellent conduction performance in high-efficiency and high-current demand applications. Its channel uses advanced Trench technology, which can achieve lower on-resistance (RDS(ON)) at lower gate drive voltage, improving power conversion efficiency. This MOSFET provides strong current handling capability with a maximum continuous drain current (ID) of 85A, which is very suitable for use in application scenarios requiring low loss and high reliability.
IPD16CN10N G-VB is a high-performance single N-channel metal oxide semiconductor field effect transistor (MOSFET) in TO252 package with 100V drain-source voltage (VDS) and ±20V gate-source voltage (VGS). It is designed to provide excellent conduction performance in high-efficiency and high-current demand applications. Its channel uses advanced Trench technology, which can achieve lower on-resistance (RDS(ON)) at lower gate drive voltage, improving power conversion efficiency. This MOSFET provides strong current handling capability with a maximum continuous drain current (ID) of 85A, which is very suitable for use in application scenarios requiring low loss and high reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 2.5V | 85A | 8.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 2.5V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 2.5V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description:
- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 10.5mΩ @ VGS=4.5V
- 8.5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 85A
- **Technology type**: Trench technology
- **Operating temperature range**: -55°C to 150°C
- **Power dissipation**: Calculate power heat dissipation and package thermal resistance, which can be used for high power design
- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 10.5mΩ @ VGS=4.5V
- 8.5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 85A
- **Technology type**: Trench technology
- **Operating temperature range**: -55°C to 150°C
- **Power dissipation**: Calculate power heat dissipation and package thermal resistance, which can be used for high power design
Domain and module applications：
Application fields and module examples:
1. **Power management module**: IPD16CN10N G-VB is commonly used in DC-DC converters, power modules and motor drivers. Such applications need to handle high currents. The low on-resistance and high current capability of MOSFET can reduce power consumption and improve efficiency, and is suitable for use in power management with high efficiency requirements.
2. **Automotive electronics**: In automotive applications, especially for electric vehicles, hybrid vehicles, etc., IPD16CN10N G-VB can work stably in high temperature environments and provide high current drive. It is suitable for motor control, on-board charging systems and energy recovery systems in automobiles.
3. **Industrial control**: This MOSFET is also widely used in industrial automation equipment and motor control. Its high voltage and high current characteristics enable it to adapt to complex load requirements, and is suitable for modules such as switch mode power supplies (SMPS), inverters and servo drives in the industrial field.
4. **Consumer Electronics**: In high-power consumer electronics such as LED lighting and notebook power adapters, the high efficiency and low heat output of the IPD16CN10N G-VB make it an ideal choice, effectively extending the service life of the equipment and reducing the complexity of thermal management design.
1. **Power management module**: IPD16CN10N G-VB is commonly used in DC-DC converters, power modules and motor drivers. Such applications need to handle high currents. The low on-resistance and high current capability of MOSFET can reduce power consumption and improve efficiency, and is suitable for use in power management with high efficiency requirements.
2. **Automotive electronics**: In automotive applications, especially for electric vehicles, hybrid vehicles, etc., IPD16CN10N G-VB can work stably in high temperature environments and provide high current drive. It is suitable for motor control, on-board charging systems and energy recovery systems in automobiles.
3. **Industrial control**: This MOSFET is also widely used in industrial automation equipment and motor control. Its high voltage and high current characteristics enable it to adapt to complex load requirements, and is suitable for modules such as switch mode power supplies (SMPS), inverters and servo drives in the industrial field.
4. **Consumer Electronics**: In high-power consumer electronics such as LED lighting and notebook power adapters, the high efficiency and low heat output of the IPD16CN10N G-VB make it an ideal choice, effectively extending the service life of the equipment and reducing the complexity of thermal management design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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