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IPD160N04L G-VB Product details
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1. IPD160N04L G-VB Product Introduction:
IPD160N04L G-VB is a single N-channel MOSFET in TO252 package, suitable for high-efficiency switching power supplies, low-voltage applications, power tools and other fields. The device has excellent on-resistance performance and high current handling capability, with a maximum drain-source voltage (VDS) of 40V and a gate-source voltage tolerance of ±20V. It uses Trench technology to achieve lower on-resistance and higher switching efficiency. Its low gate threshold voltage (Vth) enables it to operate at a lower gate drive voltage, thereby optimizing circuit design.
IPD160N04L G-VB is a single N-channel MOSFET in TO252 package, suitable for high-efficiency switching power supplies, low-voltage applications, power tools and other fields. The device has excellent on-resistance performance and high current handling capability, with a maximum drain-source voltage (VDS) of 40V and a gate-source voltage tolerance of ±20V. It uses Trench technology to achieve lower on-resistance and higher switching efficiency. Its low gate threshold voltage (Vth) enables it to operate at a lower gate drive voltage, thereby optimizing circuit design.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. IPD160N04L G-VB Detailed parameter description:
- **Package type**: TO252
- **Polarity configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 40V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 14mΩ @ VGS=4.5V
- 12mΩ @ VGS=10V
- **Maximum drain current (ID)**: 55A
- **Technology type**: Trench technology
- **Package form**: Surface mount, suitable for compact circuit board design
- **Operating temperature range**: -55°C to 175°C
- **Package type**: TO252
- **Polarity configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 40V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 14mΩ @ VGS=4.5V
- 12mΩ @ VGS=10V
- **Maximum drain current (ID)**: 55A
- **Technology type**: Trench technology
- **Package form**: Surface mount, suitable for compact circuit board design
- **Operating temperature range**: -55°C to 175°C
Domain and module applications：
III. Application fields and module examples:
1. **Power management module**: IPD160N04L G-VB is commonly used in DC-DC converters, especially switching power supplies that require low on-resistance to improve conversion efficiency and reduce power consumption. It is suitable for power systems such as laptops, desktops, and servers.
2. **Power tools**: The high current handling capability and low RDS(ON) characteristics of the device make it suitable for use in the drive circuits of power tools, such as drills, electric saws and other high-power demand equipment. It can withstand high currents without overheating, extending the service life of the equipment.
3. **Battery management system (BMS)**: In the lithium battery protection circuit of electric vehicles and portable devices, IPD160N04L G-VB can be used to control the battery's charge and discharge path, ensuring that the battery operates within a safe voltage and current range, thereby extending battery life and providing higher safety.
4. **Electric Vehicle (EV) Inverter**: This MOSFET is suitable for low-voltage control circuits in electric vehicle drive inverters. It can efficiently handle current and reduce switching losses, improving the efficiency and reliability of the entire vehicle system.
The wide application range of this MOSFET makes it an ideal choice for many low-voltage and high-efficiency current control designs.
1. **Power management module**: IPD160N04L G-VB is commonly used in DC-DC converters, especially switching power supplies that require low on-resistance to improve conversion efficiency and reduce power consumption. It is suitable for power systems such as laptops, desktops, and servers.
2. **Power tools**: The high current handling capability and low RDS(ON) characteristics of the device make it suitable for use in the drive circuits of power tools, such as drills, electric saws and other high-power demand equipment. It can withstand high currents without overheating, extending the service life of the equipment.
3. **Battery management system (BMS)**: In the lithium battery protection circuit of electric vehicles and portable devices, IPD160N04L G-VB can be used to control the battery's charge and discharge path, ensuring that the battery operates within a safe voltage and current range, thereby extending battery life and providing higher safety.
4. **Electric Vehicle (EV) Inverter**: This MOSFET is suitable for low-voltage control circuits in electric vehicle drive inverters. It can efficiently handle current and reduce switching losses, improving the efficiency and reliability of the entire vehicle system.
The wide application range of this MOSFET makes it an ideal choice for many low-voltage and high-efficiency current control designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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